国家/地区 中国（10）
IPC部 C（10）
IPC大类 C01（10） H01（10） B01（4）
C23（4） B82（2） C30（2）
IPC小类 C01B（10）
IPC H01L021/02（10）
发明人
公开年 2017（7） 2016（3）
申请年 2016（10）
专利权人

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Production of layered structure involves depositing catalyst structure onto substrate top surface containing non-electroconductive material, depositing graphene structure onto catalyst structure, and partially removing catalyst structure.

LUTZ T, PURKL F, ROELVER R, ROHLFING F

Method for forming multilayer graphene for e.g. stackable device, involves forming multilayer graphene on area of graphene at temperature by using source gas, where source gas used to form graphene is different from source gas.

HYOWON K, KIM H, KIM H W, JIN X

Semiconductor device, has resin material that is provided for covering semiconductor chip which is coupled onto substrate through bump electrode and that is provided for containing resin and graphene particles.

MATSUBARA Y, YOSHIHISA M

Preparing chlorine-doped multilayer graphene film for photoelectric detector, by mixing ethylene glycol and hydrochloric acid, stirring while heating, mixing, dripping precursor solution on quartz plate, spin coating and annealing.

TANG L, JI R, XIANG J, ZHANG Q

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Substrate used in graphene transfer technology, consists of silicon dioxide layer and semiconductor silicon layer, and forms PN junction which can easily access light source when used with appropriate forward voltage.

HUANG S, QIU J

Removal of graphene used for patterning monolayer or multilayer graphene film, by irradiation with UV light of specific wavelength in specific environment.

LIU H, WANG W, TAN H, QIN X