国家/地区 美国（11） 世界知识产权组织（8） 中国（7） 欧洲专利局（EPO）（6） 日本（5） 韩国（5） 印度（2）
IPC部 C（14）
IPC大类 C01（14） H01（14） B82（5）
IPC小类 C01B（14）
IPC H01L051/00（14）
发明人 LI H（2）
公开年 2016（7） 2015（4） 2017（3）
申请年 2015（14）
专利权人

Method for forming e.g. drain contacts for e.g. graphene FET, involves forming grown-in graphitic interface layer at interface between source and graphene surface source contacts and drain contact and graphene surface drain contact.

COLOMBO L, VENUGOPAL A

Transferring graphene to produce electronic devices e.g. touch panel, comprises e.g. preparing laminate containing support layer/graphene layer, and placing laminate in holder containing holes to produce holder composite.

CHO K, KIM H H, LEE S K, LEE S G

Heterojunction graphene nanoribbon for resonant tunneling diode comprises substrate, and first, second, and third graphene nanoribbon elements.

YAMAGUCHI J

Preparation of reduced and N-doped graphene oxide used in a transistor, comprises preparing mixed solution containing graphene oxide and tetramethylammonium hydroxide, and heating the mixed solution.

KHAN F, BAEK S, KIM J H, BAEK S H

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Method for generating light emission from electrically biased graphene for electrodes and optoelectronic applications, involves providing current to graphene membrane to establish source-drain bias voltage along graphene membrane.

KIM Y D, WANG L, LEE S, HONE J

Method of forming graphene layer for producing graphene-containing device e.g. diode involves forming graphene on region of underlayer using source gas and forming another graphene on another region using another source gas.

KIM H, LEE J, JIN X, KIM H W, LEE J H

Wiring used as conductor in semiconductor device (e.g. integrated circuit, or memory chip) or electronic circuit, comprises multilayer graphene including graphene sheets, interlayer substance, and organic compound layer.

MIYAZAKI H, SAKAI T

Manufacture of electronic device for e.g. smartphone, involves forming graphene oxide on support substrate and then forming sacrificial layer, forming base substrate on sacrificial layer, and coating solvent on sacrificial layer.

HAN T, PARK J, PARK H, NOH S, TAE H H, SEONG P J, NOH S H

Method for forming nano-gaps in graphene used in e.g. electronic device, involves applying voltage across third region of single layer graphene such that nano-gap extending across the entire width of single layer graphene is formed.

BRIGGS G A D, MOL J A