国家/地区 日本（70）
IPC部 B（70）
IPC大类 C01（70）
IPC小类 C01B（70）
IPC C01B031/02（70）
发明人 CHIBA Y（5） FAN F Y（5） FAN S（5）
JIANG K（5） LIN X（5） XIAO L（5）
CHIBA G（4） LIN X Y（4） VEERASAMY V（4）
VEERASAMY V S（4） BAE S K（3） CHUNG H（3）
CHUNG H J（3） HEO J（3） HEO J S（3）
公开年 2013（18） 2012（16） 2011（13） 2015（8） 2016（5） 2010（4） 2009（2） 2014（2） 2017（2）
申请年 2011（19）  2012（16）  2010（8）  2013（8）  2014（6）  2009（5）  2015（3）  2008（2）  2016（2） 
专利权人 JX NIPPON MI.（6） SAMSUNG ELEC.（6） HON HAI PREC.（5） HONGFUJIN PR.（5）
NIPPON MININ.（5） UNIV TSINGHU.（5） GUARDIAN GLA.（4） GUARDIAN IND（4）
GUARDIAN IND.（4） NIPPON MININ.（4） DOKURITSU GY.（3） TE CONNECTIV.（3）
TYCO ELECTRO.（3） CENT NAT REC.（2） COMMISSARIAT.（2） COMMISSARIAT.（2）
FUJITSU LTD（2） GRAPHENE SQU.（2） GUO S（2） JAPAN SCI TE.（2）

Continuous method for preparing film comprising graphene, involves advancing metal substrate having graphene-comprising layer out of processing chamber, and separating graphene-comprising layer to form film comprising graphene.

HARUTYUNYAN A, HARUTYUJAN A

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Low-reflection graphene used in e.g. optical component, comprises graphene layer having surface parallel to specific direction, and another graphene layer in direction which intersects specified direction, where both layers form recess.

UEKUSA K, SHIMADA N, YAZAWA K, YAMADA T, HASEGAWA M, SHIMADA NAYUTA, YAZAWA KENJI, YAMADA TAKATOSHI, HASEGAWA MASATAKA, UEKUSA KAZUTERU

Graphene nano tape for use in electronic device, has inner walls that are provided with tape-shaped portion which is adjoined or attached for covering full length.

KAMISHIMA M, WATANABE H, NAGAMUNE T, KATADA A

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M