国家/地区 英国（23）
IPC部 C（23）
IPC大类 C01（23） C23（17） H01（15）
B82（10） C30（6） B32（4）
C08（2） G01（2） H02（2）
IPC小类 C01B（23）
IPC C01B032/186（23）
发明人 GUINEY I（10） THOMAS S（9） DIXON S（6）
COLOSIMO N G R（3） GRIFFIN R M（3） TYLER M（3）
WALLIS R（3） BADCOCK T J（2） BOINTON T H（2）
CRACIUN M（2） GLASS H（2） RUSSO S（2）
TAYLOR M（2） ZHANG X（2）
公开年 2021（6） 2022（5） 2015（3） 2016（3） 2013（2） 2019（2）
申请年 2020（4）  2014（3）  2015（3）  2021（3）  2022（3）  2013（2）  2018（2）  2019（2） 
专利权人 PARAGRAF LTD（11） BAE SYSTEMS .（3） UNIV EXETER（2）

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.

DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing graphene useful for electronic devices comprises forming graphene on non-metallic surface of substrate by chemical vapor deposition in reaction chamber and adding precursor in gas phase and suspended in gas into reaction chamber.

DIXON S, GRIFFITHS J, GRIFFIN R M, GUINEY I, THOMAS S

Forming graphene on silicon substrate for electronic device, comprises providing silicon wafer having growth surface free of native oxides in reaction chamber, and nitriding growth surface with nitrogen-containing gas with wafer.

DIXON S, GUINEY I, THOMAS S, THOMAS S C S

Manufacturing first sheet of first two-dimensional material i.e. graphene, comprises e.g. providing container containing substrate, comprising set of layers having solid layer and volume above substrate and supplying precursor species.

COLOSIMO N G R

Formation of diode for electronic application, involves providing graphene layer structures on substrates, treating structures with oxidant to form graphene oxide surface, and aligning structure against graphene oxide surface of structure.

WALLIS R, WALLACE R

Making first sheet of first two-dimensional material has providing container containing substrate comprising set of layers including first liquid layer and solid layer above it, supplying precursor species, allowing precursor species to settle on surface of substrate and liquefying solid layer.

COLOSIMO N G R

Electrical generator for generating electricity from sea water, comprises graphene sheet/s comprising electrical contacts and having surface extending between electrical contacts arranged to contact flow of ion-containing fluid.

GUINEY I, TYLER M, THOMAS S, TAYLOR M