国家/地区 中国（7） 美国（6） 世界知识产权组织（3） 日本（2） 韩国（2） 台湾（2）
IPC部 C（13）
IPC大类 C01（13） B82（4） C30（4）
C23（3） C09（2） G01（2）
IPC小类 C01B（13）
IPC C01B032/188（13）
发明人 LI J（2）
公开年 2021（8） 2020（3） 2022（2）
申请年 2020（13）
专利权人

Preparation of graphene involves growing graphene film on growth substrate, setting viscose layer on surface of graphene film, removing growth substrate and using water or cleaning organic solvent, and etching away from surface film.

FAN S, LI Q, JIN Y, ZHANG L, ZHANG T

Growing coherent nanowhiskers coated with two-dimensional monolayers on surface of coherent nanowhiskers, comprises growing graphene layers on outer and inner surfaces of whiskers in crystallization zone, and blowing with inert gas.

MAKSIMOVSKY S N

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Optical absorption material used for light absorption composition comprises film-like carbon structure which consists of graphenes having plate-shaped aggregate where the film-like carbon structure does not contain a metallic element.

FURUBAYASHI H, IKEDA T, KANO S, AOYAGI Y

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Obtaining a silicon carbide (SiC)-graphene surface composite with controlled surface morphology for use in e.g., electronics by subjecting SiC substrate, after initial preparation, to annealing in beam of silicon atoms and cooling.

CIOCHON P, KOLODZIEJ J

Composition used in flexible near infrared photodetector, comprises nanowire.

IYER S, NALAMATI S R K, LI J

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L

Preparing wafer-level single crystal copper foil comprises cutting edges of polycrystalline copper foil to obtain polycrystalline copper foil with notches, and annealing in hydrogen atmosphere to obtain single crystal copper foil.

LI Y, LI L, CHEN Z, SU C, TIAN B

Production of electronic device such as integrated circuit board, involves providing substrate, supplying flow comprising precursor compound, selectively laser ablating graphene, and selectively laser ablating surface of substrate.

GLASS H, GUINEY I, TYLER M, WALLIS R, BAINES R, THOMAS S