国家/地区 韩国（17）
IPC部 C（17）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C23C016/50（17）
发明人 LEE C（4） LEE C S（4） BYUN K（3）
BYUN K E（3） KIM C（3） KIM S（3）
LEE E（3） SHIN H（3） SHIN H J（3）
SHIN K（3） HONG B H（2） JIN C（2）
KIM J K（2） LI C（2） LI Y（2）
公开年 2021（4） 2012（2） 2013（2） 2014（2） 2016（2） 2020（2）
申请年 2014（3）  2020（3）  2011（2）  2012（2）  2021（2） 
专利权人 SAMSUNG ELEC.（4） GRAPHENE SQU.（2）

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Two-dimensional material forming apparatus comprises substrate moving unit, and two-dimensional material forming unit for forming two-dimensional material by spraying carbon gas on substrate moved by substrate moving unit.

SHIN U C

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

In situ preparation of electroless graphene thin film useful in flexible electronic device, comprises e.g. forming titanium catalyst layer by sputtering on substrate, and performing In-situ plasma assisted chemical vapor deposition.

YOON S G, PARK B J

Method for fabricating graphene nano-mesh in e.g. transparent display device, involves forming graphene nano-mesh including openings by etching oxide layer, and transferring graphene nano-mesh onto substrate after removing catalyst layer.

LEE J, KIM Y, LEE C, LEE J H, KIM Y S, LEE C S

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S