国家/地区 中国（8） 美国（5） 韩国（3） 世界知识产权组织（2）
IPC部 C（14）
IPC大类 C01（14）
IPC小类 C01B（14）
IPC C01B031/04（12） C04B041/50（5） B82Y040/00（4）
B82B003/00（3） B82Y030/00（3） C01B031/02（3）
C04B035/622（3） C04B041/85（3） C01B031/00（2）
C04B035/532（2）
发明人 GUO H（3） LEI T（3） ZHANG Y（3）
WU Y（2） ZHANG C（2）
公开年 2013（14）
申请年 2013（6）  2012（5）  2011（3） 
专利权人 UNIV XIDIAN（3）

Preparing graphene/nickel-zinc-cerium-iron oxide nano-absorbing material comprises e.g. dissolving nickel-zinc-cerium-iron oxide powder in N,N-dimethylformamide, dropping graphite oxide-N,N-dimethylformamide, reacting and vacuum drying.

HUANG Y, WANG K, ZHANG W, WANG Y, WU H, SANG Y

Graphene-based heat dissipation system for e.g. portable microelectronic device, has heat-conducting layer comprising sheet of integrated graphene film, which shields component or external surface of electronic device from heat.

ZHAMU A, WANG M, XIONG W, JANG B Z

Producing graphene, comprises causing motion of enclosed container comprising substrate material and graphite material within container, and coating surfaces of substrate material with graphite material responsive to motion of container.

CHANG C, CHANG T

Preparation of graphene oxide modified polycarboxylate water reducer includes adding sulfuric acid, potassium peroxydisulfate and phosphorus pentoxide into reactor, heating, adding natural graphite raw material, stirring, and filtering.

LV S, MA Y, ZHOU Q

Preparing graphene, involves oxidizing graphite material, dispersing graphite oxide in water, and adding dispersing agent and acidic reducing agent to graphite oxide aqueous suspension so that graphite oxide is reduced to graphene.

WU Y, HSIEH C, PENG C, CHEN J, LIN J, LIN G

Manufacture of graphene powder for e.g. photoelectric device, involves decomposing organic substances by fast heating in oxyhydrogen flame, and reconfiguring produced active carbon atoms on insulating substrate or catalyst substrate.

HUANG F, LIN T

Preparation of wide graphene silicon-based substrate grating used as copper film annealing graphene involves chemical vapor deposition, carbonization, growing silicon carbide hetero-epitaxial film, depositing copper film and annealing.

GUO H, LEI T, LIU J, ZHANG Y, HU Y

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Copper film annealing of silicon carbide substrate in chlorine used in synthesizing graphene by forming carbon film on copper film by physical vapor deposition, plating copper layer, introducing argon gas and annealing.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Manufacture of graphene on polycrystalline silicon carbide used as bearing element in mechanical engineering, involves polishing silicon carbide components, cleaning, and graphitizing polished surface by annealing.

BENNEWITZ R, ASLAN M, WAEHLISCH C F