国家/地区 中国（18） 美国（18） 世界知识产权组织（12） 欧洲专利局（EPO）（9） 日本（9） 韩国（6） 新加坡（3） 台湾（3） 澳大利亚（2） 加拿大（2）
IPC部 C（25）
IPC大类 C01（25）
IPC小类 C01B（25）
IPC C01B032/186（25）
发明人 LIU X（3） CHEN Z（2） SONG Z（2）
公开年 2017（25）
申请年 2016（15）  2017（10） 
专利权人 CORNING INC（3） SHANGHAI INS.（2）

Preparing large size and high quality graphene based on self-limiting nucleation growth comprises e.g. polishing the copper foil, depositing and covering with nickel metal, adding the covered nickel metal copper foil into growth chamber.

ZHANG A, YANG M, CHEN J, ZHAO Y, WEI W, ZHANG X

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Manufacture of nitrogen-doped graphene film used as conductive film, involves forming nitrogen-doped graphene film on base by irradiating base with plasma containing hydrocarbon, nitrogen, and oxygen having preset partial pressure.

OKIGAWA YUKI, YAMADA TAKATOSHI, ISHIHARA MASATOU, HASEGAWA MASATAKA

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Preparation of controllable three-dimensional graphene involves preparing computer-aided design model, constructing prepared model by additive manufacturing methods to obtain three-dimensional resin structure, and plating.

CHEN P, LI Z, SHI Y, YAN C, YANG L

Apparatus for continuous production of graphene, has rotatable substrate which is included with endless rotatable surface comprising material for accepting deposition of primary carbon layer prior to graphene growth.

ANDREASSEN JAKOBSEN M, DATSYUK V, JAKOBSEN M A

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Continuous method for preparing film comprising graphene, involves advancing metal substrate having graphene-comprising layer out of processing chamber, and separating graphene-comprising layer to form film comprising graphene.

HARUTYUNYAN A, HARUTYUJAN A

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Chemical vapor deposition process for forming foam-like structure, involves causing decomposition of organometallic compound vapor into metal particles, and precursor gasses into graphene domains and/or hexagonal-boron nitride domains.

LOEBLEIN M, TSANG S H, TEO H T E, TSANG S, ZHANG H