国家/地区 美国（7） 世界知识产权组织（5） 韩国（4） 中国（3） 欧洲专利局（EPO）（3） 日本（3）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C23C016/02（10）
发明人
公开年 2017（10）
申请年 2016（5）  2017（5） 
专利权人

Graphene composite electrode used for manufacturing electrochromic device, consists of graphene layer, atomic layer formed on graphene layer, and transparent conductive layer formed on atomic layer.

KIM H K, KIM Y K, HAN S H, LEE S J, SEO J W

Apparatus for continuous production of graphene, has rotatable substrate which is included with endless rotatable surface comprising material for accepting deposition of primary carbon layer prior to graphene growth.

ANDREASSEN JAKOBSEN M, DATSYUK V, JAKOBSEN M A

Chemical vapor deposition process for forming foam-like structure, involves causing decomposition of organometallic compound vapor into metal particles, and precursor gasses into graphene domains and/or hexagonal-boron nitride domains.

LOEBLEIN M, TSANG S H, TEO H T E, TSANG S, ZHANG H

Graphene deposition process for deposition of graphene on substrates, involves generating radio frequency plasma at location proximate to substrate, while flowing precursor gas containing carbon through plasma and over substrate.

CHEN Z, CHUGH S, MEHTA R

Producing graphene film, comprises e.g. ultrasonically cleaning a metal substrate with hydrochloric acid, acetone, and deionized water to remove moisture content on surface, subjecting to high temperature annealing, and uniformly cooling.

HU B, ZHAO W

Method for fabricating composite film structure for strain sensor system for measuring mechanical movements in biological sample, involves removing metal substrate from graphene and deposited metallic layer to form composite film structure.

ZARETSKI A, LIPOMI D J, SAVTCHENKO A, MOLOKANOVA E, MERCOLA M

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Manufacture of graphene for fabrication of electronic device, involves adsorbing molecule having six-membered ring structure onto surface of substrate, and irradiating surface using beam of molecules containing carbon atoms.

MATSUMOTO T

Composite used for electrode of transistor used in flexible device, consists of single crystal sapphire substrate having dislocation density less than preset value, metal film grown on substrate, and graphene film grown on metal film.

AOTA N, AIDA H

Graphene-coated substrate has graphene layer which is formed in direct contact with surface of dielectric substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z