国家/地区 台湾（13）
IPC部 C（13）
IPC大类 C01（13）
IPC小类 C01B（13）
IPC C23C014/06（13）
发明人 HU C（3） HU C L（3） CHIU S（2）
CHIU S M（2） CHUNG C（2） CHUNG C J（2）
HUANG C（2） HUANG C H（2） HUANG J（2）
QIU S（2） WU B（2） WU B H（2）
ZHONG C（2）
公开年 2010（2） 2015（2） 2016（2） 2021（2）
申请年 2009（2）  2013（2）  2014（2）  2020（2） 
专利权人 H HT CO LTD（3） FOUND METAL .（2） HU C（2） HU C L（2）
METAL IND RE.（2）

Laminate used for electronic device such as display device, comprises substrate, layer containing compound having condensed polycyclic hydrocarbon structure, and layer containing conductive material.

NAOYA N, KAZUNORI T, NOSAKA N, TAKANASHI K

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Manufacturing method of orderly arrangement and carbon deposition composite coating of graphene carbon nanotubes on metal substrate, involves depositing particles on substrate as catalyst of carbon to form carbon structural layer.

CHIEN S P

Method for producing graphene, involves placing substrate in vacuum chamber, and heating graphite to sublimation under vacuum and depositing graphite on substrate after sublimation.

WANG W

Method of manufacturing coating layer structure applied to machine element, involves locating continuous graphene structure layer between metal substrate and coating layer to act as buffer structure between substrate and coating layer.

HUANG Y, HU C, HU Q, HUANG Y C, HU C L

Method for producing large-area reduced graphene oxide sheet on substrate, involves subjecting substrate and graphene oxide layer to reduction process simultaneously, and forming reduced graphene oxide layer after reduction process.

HU C L, HU C

Graphene manufacturing method by which high quality and large-area of continuous graphene layer can be directly generated on metal or nonmetal substrate.

HU C, HU C L

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.

HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H