国家/地区 美国（8） 中国（6） 韩国（6） 欧洲专利局（EPO）（5） 日本（5） 世界知识产权组织（4） 台湾（2）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C01B032/186（11）
发明人 LEE E（2） LI Y（2） YANASE M（2）
YANASE Y（2） YOON J（2）
公开年 2018（2） 2020（2） 2021（2） 2022（2）
申请年 2017（2）  2019（2）  2021（2） 
专利权人 SHINETSU CHE.（2） SHINETSU CHE.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises etching transition metal thin film to form three-dimensional pattern and inserting into chemical vapor deposition chamber to synthesize graphene.

KIM J, WIMALANANDA M D S, LEE J M

Pellicle film used for preventing dust from adhering to photomask or reticle, comprises layers laminated to each other and/or layers provided with one or more openings.

TAKADA N, SEKI K, KODERA Y, SEKIGAZUNORI, YUTAKA G

Producing graphene film by immersing graphene film and resin layer in laminate made of graphene film arranged on base material and resin layer arranged on graphene film in non-polar solvent and immersing in solution for removing resin layer.

OKIKAWA Y, YAMADA T, HASEGAWA M

Processing the double-sided doping of single-layer graphene comprises e.g. using methane, hydrogen, and argon as gas sources in catalytic metals in a low-pressure CVD system growth of single-layer graphene film on the substrate.

LI D, CHEN Y, SUN X, JIA Y, JIANG K, SHI Z, ZANG X

Pellicle film for pellicle used as dust guard in photolithography during manufacture of e.g. semiconductor device, has main layer made of single crystal silicon, and graphene provided on both sides of main layer.

YANASE Y, YANASE M

Graphene wiring structure for use in semiconductor device, has multilayer graphene formed on insulating film, where average particle diameter of graphene crystals is larger than width of multilayer graphene.

MIYAZAKI H, SAKAI T, NISHIDA Y, YOSHIDA T, YAMAZAKI Y, KATAGIRI M, SAKUMA N, SAKUMA H

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Method of fabricating patterned graphene sheets for apparatus involves fabricating substrate with patterned oxide surface, and applying graphene sheets to patterned oxide surface to form layer of graphene.

WANG K, NAVABISHIRAZI A, YAZDANI M, WANG K L

Multilayer structure of capacitor, has first and third layers each form one of two dee-trodes and comprise pyrolysed carbon nanomembranes or layers of graphene, and second layer is dielectric comprising car-bon nanomembranes.

BEYER A, GOLZHAUSER A, PENNER P, ZHANG X, GOELZHAEUSER A