国家/地区 中国（30） 美国（24） 世界知识产权组织（20） 欧洲专利局（EPO）（14） 日本（14） 韩国（12） 英国（3） 加拿大（2） 香港（2） 新加坡（2） 台湾（2）
IPC部 C（44）
IPC大类 C01（44） C23（15） B82（13）
H01（13） B32（6） B01（4）
C25（4） C30（4） C04（2）
C09（2） C12（2） G01（2）
H05（2）
IPC小类 C01B（44）
IPC C01B032/186（44）
发明人 LU J（3） BI H（2） CHEN L（2）
DAI J（2） DI Z（2） HE J（2）
HUANG F（2） KIM K（2） KIM S（2）
LI C（2） LI J（2） LI X（2）
LIU C（2） LIU J（2） LU M（2）
公开年 2015（44）
申请年 2014（22）  2015（19）  2013（3） 
专利权人 SHANGHAI INS.（3） SAMSUNG TECH.（2） SHANGHAI INS.（2） UNIV CALIFOR.（2）
UNIV YULIN N.（2） YULIN TEACHE.（2）

Multilayer structure of capacitor, has first and third layers each form one of two dee-trodes and comprise pyrolysed carbon nanomembranes or layers of graphene, and second layer is dielectric comprising car-bon nanomembranes.

BEYER A, GOLZHAUSER A, PENNER P, ZHANG X, GOELZHAEUSER A

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

New biocompatible interface comprising graphene-related materials (G-biointerface), useful for remote manipulation of electrical properties of cell membrane.

MOLOKANOVA E

Graphene structure for electronic component e.g. transistor, comprises two-dimensional base graphene layer having defect, and linking material formed at defect of base graphene layer.

SUNG M, KIM S, MO S M, KIM S J, CHENG M

Apparatus for plasma synthesis of graphitic products including graphene, passes cracked carbon-containing species into reaction chamber, and recombining cracked carbon-containing species within afterglow.

PENNINGTON D A, CLAYTON A R, JUDA K L, PAUKNER C, KURZEPA L, COOPER R H S J, KOZIOL K K, JOAUG J Y, ST JOHN COOPER R H, ST JOHN C R H

Apparatus for manufacture of graphene, has reactor supplied with gas comprising carbon compound and charged with catalyst having silicon carbide, nickel and zeolite, and microwave exposure portion for irradiating microwave to catalyst.

MIYAKOSHI A

Preparing graphene on insulator by placing germanium catalyst substrate in growth chamber, introducing hydrogenous atmosphere to form germanium-hydrogen bond, heating substrate, and performing microwave treatment.

DI Z, JIA P, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J

Preparation of textured graphite for, e.g. sensor, involves placing catalytic substrate in growth chamber, introducing carbon source, heating to grow graphene, and cooling in non-oxidizing protective atmosphere to form graphene surface.

DI Z, WANG G, SHI X, XUE Z, ZHANG M, ZHENG X, DAI J

Functionalized graphene used to identify defects present in the graphene plane, comprises at least one functional group covalently bonded directly to edge of graphene plane, where the functional group is e.g. nitro, amine, halide.

BLANFORD C, HARTMANN M, FLITSCH S, WEHNER M

Semiconductor element has substrate, graphene provided on one surface of substrate, and convex portion whose at least one portion comprises metal.

KOJIMA E, KANO K