国家/地区 美国（59）
IPC部 C（59）
IPC大类 C01（59）
IPC小类 C01B（59）
IPC C01B032/18（59）
发明人 TAMAKI E（7） KAWASAKI M（4） MIHASHI F（4）
MITSUHASHI F（4） SAKAI T（4） TATENO Y（4）
TODORIKI H（4） TODOROKI H（4） UENO M（4）
YONEDA Y（4） FUKIDOME H（3） HASEGAWA S（3）
HASEGAWA SHOJI（3） KAJITA A（3） KAMIYA N（3）
公开年 2015（19） 2017（18） 2013（6） 2014（5） 2012（4） 2018（3） 2016（2）
申请年 2014（13）  2016（13）  2013（9）  2015（8）  2012（6）  2017（6） 
专利权人 SEMICONDUCTO.（9） TORAY IND IN.（7） TOSHIBA KK（5） SUMITOMO ELE.（4）
GRAPHENE PLA.（3） TODORIKI H（3） TOKYO ELECTR.（3） UNIV TOHOKU（3）
BOEING CO（2） FUJITSU LTD（2） GRAPHENE PLA.（2） GUO S（2）
LG CHEM CO L.（2） LG CHEM LTD（2） NOMOTO K（2） OZKAN C S（2）
OZKAN M（2） TORAY ADVANC.（2） UNIV CALIFOR.（2） WANG W（2）

Manufacturing electrostatic self-assembled silicon/reduced graphene oxide (rGO)/carbon nanofibers composite as anode materials for lithium-ion battery, involves obtaining silicon (Si)-(3-aminopropyl)triethoxysilane (APTES) solution by adding predetermined silicon nanoparticles to piranha solution.

CONG R, LEE C S, LEECHANGSUP, FEMALE T

Anisotropic etching of graphene used as electronic material, involves generating hydrogen plasma using microwave plasma, and anisotropically etching graphene using generated hydrogen plasma.

IFUKU R, MATSUMOTO T

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Graphene structure for use in a semiconductor device, comprises a multilayer graphene that is laminated with graphene sheets, where three interlayer materials are presented between the graphene sheets of the multilayer graphene.

MIYAZAKI H, YOSHIDA T, KATAGIRI M, YAMAZAKI Y, SAKAI T

Stacked body for use in electronic device, has exposed surface which is being main surface opposite to substrate, and regions each including graphene layers and having circumcircle with predetermined diameter range.

OKADA M, MITSUHASHI F, UENO M, TATENO Y, SUEMITSU M, FUKIDOME H, MIHASHI F

Stacked body used in electronic device such as transistor ,has graphene film arranged on first main surface and having atomic arrangement oriented in relation to atomic arrangement of silicon carbide forming substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, SUEMITSU M, FUKIDOME H, MIHASHI F

Surface-treated graphene used for manufacturing dispersion liquid for forming composite particles for electrode paste, is obtained by adhering aromatic amine compound or its neutralized salt with graphene.

MANABE K, TAMAKI E, KAWASAKI M

Substrate for electronic device, such as a field-effect transistor, includes graphene film having atomic arrangement oriented in relation to atomic arrangement of material forming the surface layer region of support substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, MIHASHI F

Semiconductor device, has interconnect having catalyst layer capable of growing graphene, graphene layer in side surface of catalyst layer, and non-catalyst layer in bottom surface of graphene layer, and incapable of growing graphene.

SAITO T, ISOBAYASHI A, KAJITA A

Graphene wiring structure comprises multilayered graphene having laminated multiple planar polycrystal graphene sheets, and metal oxyhalide and metal halide which exist in the interlayer of planar polycrystal graphene sheets.

MIYAZAKI H, SAKAI T, KATAGIRI M, YAMAZAKI Y