国家/地区 美国（16） 韩国（12） 中国（9） 欧洲专利局（EPO）（6） 世界知识产权组织（5） 日本（4） 台湾（4） 德国（2）
IPC部 C（24）
IPC大类 C01（24）
IPC小类 C01B（24）
IPC G03F007/20（12） C01B031/04（10） C01B031/02（8）
B82Y030/00（6） B82Y040/00（6） C01B032/186（6）
C01B032/194（6） G03F001/62（6） H01L021/027（6）
G03F007/16（5） C23C016/26（4） G03F001/64（4）
G03F007/00（4） C01B032/184（3） G03F007/004（3）
发明人 LEE D（2） PARK J（2） SHIN H（2）
SHIN H J（2） SUNG C（2） YANASE M（2）
YANASE Y（2）
公开年 2018（4） 2022（4） 2012（3） 2013（3） 2016（3） 2017（2）
申请年 2016（6）  2012（3）  2022（3）  2011（2）  2013（2）  2017（2） 
专利权人 SAMSUNG ELEC.（4） SHINETSU CHE.（2） SHINETSU CHE.（2） SUNG C（2）

Synthesisizing nickel-manganese-sulfur decorated reduced graphene oxide nanocomposite for ultra-fast photocatalytic degradation of organic dyes, involves adding manganese chloride tetrahydrate into stirring solution and treating homogeneous suspension with cetyltrimethyl ammonium bromide.

SASIPRABA T, GOVINDHASAMY M

Repairing layers of laminate stack or printed circuit board, comprises providing layered structure, identifying fault location in outer graphene layer, preparing surface of outer graphene layer, and applying localized heat on fault location.

MENTOVICH E, ATIAS B, NAVEH D, LEVI A, SMOLINSKY E Z B

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Removing polymethylmethacrylate (PMMA) from graphene surface by subjecting PMMA layer to deep UV light irradiation, treating irradiated PMMA layer to remove PMMA layer and drying cleaned layer located on substrate in stream of nitrogen gas.

ALEXEEVA N, KASALYNAS I

Pellicle film for pellicle used as dust guard in photolithography during manufacture of e.g. semiconductor device, has main layer made of single crystal silicon, and graphene provided on both sides of main layer.

YANASE Y, YANASE M

Graphene wiring structure for use in semiconductor device, has multilayer graphene formed on insulating film, where average particle diameter of graphene crystals is larger than width of multilayer graphene.

MIYAZAKI H, SAKAI T, NISHIDA Y, YOSHIDA T, YAMAZAKI Y, KATAGIRI M, SAKUMA N, SAKUMA H

Micro-patterning of reduced graphene oxide in manufacture of electrode, involves patterning predetermined electrode structure by forming negative mold on substrate, coating reduced graphene oxide suspension on substrate, and removing mold.

JAE Y P, HYO S Y, XING X

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C