国家/地区 日本（15）
IPC部 C（15）
IPC大类 C01（15）
IPC小类 C01B（15）
IPC C01B032/186（15）
发明人 MOLOKANOVA E（2） YANASE M（2） YANASE Y（2）
公开年 2018（3） 2020（3） 2021（3） 2015（2） 2017（2）
申请年 2017（4）  2019（3）  2021（3）  2014（2） 
专利权人 SAMSUNG ELEC.（2） SHINETSU CHE.（2） SHINETSU CHE.（2）

Optical element comprises substrate, multilayer graphene provided on substrate, electrode connected to multilayer graphene, and another electrode connected to multilayer graphene.

KONDO O

Method for measuring thickness of graphene layer directly grown on silicon substrate by using X-ray photoelectron spectroscopy (XPS), involves obtaining effective attenuation length from linear relationship between measurement results by transmission electron microscope and XPS.

LEE E K, CHO Y J, KIM S W, BYUN K, SONG H J, SHIN H J

Pellicle film used for preventing dust from adhering to photomask or reticle, comprises layers laminated to each other and/or layers provided with one or more openings.

TAKADA N, SEKI K, KODERA Y, SEKIGAZUNORI, YUTAKA G

Producing graphene film by immersing graphene film and resin layer in laminate made of graphene film arranged on base material and resin layer arranged on graphene film in non-polar solvent and immersing in solution for removing resin layer.

OKIKAWA Y, YAMADA T, HASEGAWA M

Detecting abnormal growth of graphene by preparing inspected object having graphene film formed by chemical vapor deposition on substrate, using dark-field optical system to receive light from film and detecting abnormal growth of graphene.

IFUKU R, MATSUMOTO T, FUJIO A, SAITO K, RYOTA I, TAKASHI M, AKIRA F, KOUSAKU S

Method for manufacturing graphene for coating cantilever used in scanning probe microscope, involves generating surface wave plasma of source gas by microwave excitation to directly form graphene film on substrate without using catalyst.

BSHWAKARMA L, ADHIKARI S, SBASHI S, UMENO M, MABUCHI Y

Pellicle film for pellicle used as dust guard in photolithography during manufacture of e.g. semiconductor device, has main layer made of single crystal silicon, and graphene provided on both sides of main layer.

YANASE Y, YANASE M

Graphene wiring structure for use in semiconductor device, has multilayer graphene formed on insulating film, where average particle diameter of graphene crystals is larger than width of multilayer graphene.

MIYAZAKI H, SAKAI T, NISHIDA Y, YOSHIDA T, YAMAZAKI Y, KATAGIRI M, SAKUMA N, SAKUMA H

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Porous silicon composite clusters used in carbon composite for electrode, comprise porous core comprising silicon secondary particles comprising aggregates of silicon primary particles comprising silicon, silicon oxide and graphene.

SON I, LEE J, PARK S, HAN S, SON I H, LEE J M, PARK S Y, LEE J H, HAN S S, LI Z