国家/地区 日本（59）
IPC部 C（59）
IPC大类 C01（59）
IPC小类 C01B（59）
IPC C01B032/186（59）
发明人 MATSUMOTO T（9） IFUKU R（8） TAKASHI M（5）
WADA M（5） RYOTA I（4） KABUKI N（3）
MIYAZAKI H（3） SHIN H（3） SHIN H J（3）
SUGIURA M（3） BIAN Q（2） BYUN K（2）
BYUN K E（2） JIN C（2） KATAGIRI M（2）
公开年 2021（11） 2022（8） 2015（7） 2017（5） 2020（5） 2013（4） 2016（4） 2018（4） 2012（3） 2014（2） 2019（2）
申请年 2021（8）  2019（7）  2014（6）  2020（6）  2013（5）  2015（5）  2016（5）  2017（5）  2022（4）  2010（2）  2011（2）  2018（2） 
专利权人 TOKYO ELECTR.（10） SAMSUNG ELEC.（5） NAT INST ADV.（4） TOSHIBA KK（3）
YAZAKI CORP（3） FUJITSU LTD（2） LAM RES CORP（2） SHINETSU CHE.（2）
SHINETSU CHE.（2） UNIV CALIFOR.（2） UNIV SINGAPO.（2） UNIV SUNGKYU.（2）

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Graphene laminate comprises substrate having insulating surface, intermediate layer located on and in contact with substrate, and graphene film located on intermediate layer and in contact with intermediate layer.

OKIGAWA Y, YAMADA T

Optical element comprises substrate, multilayer graphene provided on substrate, electrode connected to multilayer graphene, and another electrode connected to multilayer graphene.

KONDO O

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Weakly coupled enhanced graphene film for use in graphene photoelectric device, comprises an enhanced graphene structure based on weak coupling, where the enhanced graphene structure based on weak coupling comprises many graphene units stacked vertically; the graphene unit is a single graphene sheet.

LIU Y, FANG W, LI L, PENG L, GAO C, GOO C, FENG L, WEE D

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R