国家/地区 美国（9） 世界知识产权组织（6） 中国（5） 欧洲专利局（EPO）（3） 台湾（3） 法国（2） 日本（2） 韩国（2）
IPC部 B（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C23C014/58（11）
发明人
公开年 2010（2） 2013（2） 2015（2）
申请年 2013（2） 
专利权人

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Preparing nano crystalline silver-loaded microcrystalline graphene composite useful for transistors and sensors, comprises e.g. taking microcrystalline graphite, dissolving in water, reacting and treating under heat.

LI L, LIN Q

Manufacture of graphene substrate involves laminating layer comprising catalytic metal, laminating layer on surface side of above layer, heat treating obtained layer, and cooling to form graphene between substrate and layer.

NARUTSUKA S, YAMADA J

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Producing patterned graphene comprises irradiating focal point on metal substrate surface with laser beam in the presence of carbon dioxide and moving the beam relative to surface so that focal point is displaced along the pattern.

ZHAO C, DONG J, DONG X, QIAN X

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Graphene composite electrode material preparation method, involves providing glass substrate, forming metal thin film on glass substrate, and patterning metal thin film to form circuit image.

WANG Y

Making strip shaped graphene layer used in semiconductor devices e.g. sensor, involves providing carbon nanotube structure comprising film on substrate surface, implanting carbon ions into substrate, and annealing substrate to obtain layer.

LIN X, JIANG K, FAN S

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Creating layers of graphene, comprises implanting carbon atoms into a substrate at first temperature and lowering temperature of the substrate, so that the carbon atoms diffuse from substrate.

RAMAPPA D A, SULLIVAN P, RAMAPPA D