国家/地区 日本（16）
IPC部 C（16）
IPC大类 C01（16）
IPC小类 C01B（16）
IPC C23C016/02（16）
发明人 IFUKU R（3） MATSUMOTO T（3） LI Y（2）
NARKEVICIUTE I（2） SHIN H（2） SHIN H J（2）
VARADARAJAN B N（2）
公开年 2013（4） 2021（3） 2009（2） 2015（2） 2020（2）
申请年 2013（3）  2012（2）  2014（2）  2019（2）  2021（2） 
专利权人 TOKYO ELECTR.（3） LAM RES CORP（2） SAMSUNG ELEC.（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Forming graphene structure by preparing to-be-processed substrate, pre-processing by supplying gas containing carbon containing gas to to-be-processed substrate, and forming a graphene structure on surface of to-be-processed substrate.

IFUKU R, MATSUMOTO T, SUGIURA M, RYOTA I, TAKASHI M, MASAHITO S

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y