国家/地区 日本（76）
IPC部 C（76）
IPC大类 C01（76）
IPC小类 C01B（76）
IPC C23C016/26（76）
发明人 MATSUMOTO T（10） IFUKU R（9） WADA M（6）
FAN F Y（4） FAN S（4） JIANG K（4）
KABUKI N（4） LIN X（4） TAKASHI M（4）
XIAO L（4） LEE E（3） LI Y（3）
LIN X Y（3） RYOTA I（3） SUGIURA M（3）
公开年 2012（14） 2015（10） 2013（9） 2021（9） 2017（7） 2022（5） 2011（4） 2016（4） 2020（3） 2009（2） 2014（2） 2023（2）
申请年 2012（9）  2011（8）  2013（8）  2015（8）  2021（7）  2010（6）  2014（5）  2019（5）  2016（4）  2020（4）  2022（4）  2017（3）  2009（2） 
专利权人 TOKYO ELECTR.（11） SAMSUNG ELEC.（5） HON HAI PREC.（4） HONGFUJIN PR.（4）
UNIV TSINGHU.（4） NAT INST ADV.（3） TOSHIBA KK（3） UNIV CALIFOR.（3）
UNIV SINGAPO.（3） UNIV SUNGKYU.（3） BASF SE（2） COMMISSARIAT.（2）
COMMISSARIAT.（2） CORNING INC（2） FUJITSU LTD（2） GRAPHENE SQU.（2）
GUO S（2） LAM RES CORP（2） MAX PLANCK G.（2） OZKAN C S（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Continuous production apparatus of multiple types of carbon film, comprises reduction section for reducing substrate placed on belt conveyor, and raw material carbon source supply section that supplies raw material carbon source.

WATANABE J

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B