国家/地区 日本（12）
IPC部 C（12）
IPC大类 C01（12）
IPC小类 C01B（12）
IPC C23C016/511（12）
发明人 MATSUMOTO T（5） IFUKU R（4） WADA M（3）
KABUKI N（2） KIM J H（2） RYOTA I（2）
TAKASHI M（2） UEDA H（2） UMENO M（2）
公开年 2013（2） 2017（2） 2020（2） 2021（2）
申请年 2012（3）  2019（2）  2022（2） 
专利权人 TOKYO ELECTR.（6） NAT INST ADV.（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Method for manufacturing graphene for coating cantilever used in scanning probe microscope, involves generating surface wave plasma of source gas by microwave excitation to directly form graphene film on substrate without using catalyst.

BSHWAKARMA L, ADHIKARI S, SBASHI S, UMENO M, MABUCHI Y

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Manufacture of separator used for polymer electrolyte fuel cell, involves forming graphene film on surface of stainless steel in film-forming apparatus at preset temperature by microwave plasma chemical vapor deposition method.

KUMAGAI M, YOSHINO I, UMENO M, UCHIDA H

Method for manufacturing graphene film used in electronic device, involves blowing source gas containing carbon-type gas from nozzle on surface of base material, and carrying out forced diffusion of radical.

SAKAKIDA H, KIM J H

Graphene roll film has graphene film having wrinkle portion having specified width and central line average roughness, provided in base material.

YAMADA T, HASEGAWA M, TSUKAHARA N, SHIMADA N, YAZAWA K, KIM J H