国家/地区 韩国（7） 美国（7） 中国（2） 台湾（2） 世界知识产权组织（2）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C23C016/455（10）
发明人
公开年 2017（7） 2016（2）
申请年 2016（10）
专利权人 SAMSUNG ELEC.（2）

Large area graphene growth apparatus has second heater that is installed at lower portion of chamber, and second heater driving unit is configured to adjust position of second heater with respect to chamber.

GI C K, CHEOL K G

Surface processing method for graphene substrate of e.g. organic LED used in electronic device, involves forming organic material on one portion of graphene and surface-processing and forming dielectric thin film on organic material.

JAE Y B, SE J K, HYUN J S

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Method of growing graphene for use in e.g. biomedical applications, involves introducing reaction gas containing oxygen-containing carbon source into furnace, heating, UV-irradiating reaction gas and depositing graphene film on substrate.

CHIU J, YEH C, CHIU P, QIU B, QIU R, YE Z

Preparation of functionalized graphene structure for e.g. display, involves providing organic linker on graphene layer, forming organic linker layer, providing dopant material on organic linker layer, and forming dopant layer.

SUNG M, HAN K, MO S M, HAN K S, SUNG M M

Method for fabricating graphene nano-mesh in e.g. transparent display device, involves forming graphene nano-mesh including openings by etching oxide layer, and transferring graphene nano-mesh onto substrate after removing catalyst layer.

LEE J, KIM Y, LEE C, LEE J H, KIM Y S, LEE C S

Graphene film manufacturing device for forming transparent display, has bottom roll chamber where catalyst metal film is rolled in loading bobbin, that is connected to deposition chamber.

KIM Y K, YONG K K

Production of graphene used in semiconductor applications, involves forming catalyst metal film on substrate, which includes introducing carbons into catalyst metal film, heating catalyst metal film, and cooling catalyst metal film.

NISHIDE D, MATSUMOTO T, IFUKU R

Manufacturing method of graphene layer on substrate, involves exfoliating metalized graphene layer from first substrate and laminating metalized graphene layer to second substrate.

ZARETSKI A, LIPOMI D J

Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.

SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S