国家/地区 中国（27）
IPC部 C（27） B（2） G（2）
H（2）
IPC大类 C01（27） C23（5） B82（2）
C09（2） G01（2）
IPC小类 C01B（27）
IPC C01B032/186（27）
发明人 ZHANG J（27）
公开年 2018（7） 2020（5） 2017（4） 2019（4） 2021（4） 2022（2）
申请年 2019（8）  2017（5）  2018（4）  2020（4）  2021（3）  2016（2） 
专利权人 UNIV PEKING（12） BEIJING GRAP.（8） UNIV SHANDON.（3） YANGTZE OPTI.（2）

Method for manufacturing large-area continuous single-layer graphene film, involves carrying out electrochemical polishing for removing impurities on substrate, and carrying out selective etching under condition of second carbon source flow to obtain large-area continuous single-layer graphene film.

LIU Y, ZHANG J, YAO W, WU B

Manufacturing standard leak holes based on graphene membrane prepared by transfer-free technology comprises using acetone, isopropyl alcohol and acetic acid to remove oxides and other contaminants on surface of copper foil, etching copper foil, and clamping and packaging copper foil.

MENG D, REN G, SUN L, CAO Q, ZHANG J, LIN H, WANG X

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Preparing powdered graphene by passing inert gas into microwave plasma chemical vapor deposition to generate plasma, passing carbon source-nucleation density inhibitor mixed gas into microwave plasma chemical vapor deposition system to perform vapor phase growth and directly collecting graphene.

ZHANG J, SUN Y

Polyethylene-graphene composite material comprises polyethylene and graphene.

ZHANG J, SUN Y, GONG H

Preparing vertical graphene-based thermal interface material comprises preparing vertical graphene through plasma-enhanced chemical vapor deposition process under action of electric field.

ZHANG J, XU S, JI N, CHEN Z

Immersion spray etching comprises covering side of graphene-grown substrate with graphene film that needs to be retained with protective film, adding to flowing etching solution to etch substrate to form protective film/graphene.

LI T, LIU H, MAO D, ZHANG J

Device used for producing graphene includes main heating unit, auxiliary heating unit, air supply unit, pressure reducing component, bottom plate, containing space, heating space and cavity body.

ZHANG J

Surface multi-fold nitrogen-doped tubular graphene used for field emission cathode material which has tubular structure and specified quantity range of pipe diameter and is formed by staggered stacking of nitrogen-doped graphene sheets.

SONG G, LI Z, ZHANG J, LUO S, MENG A

Vertical graphene growth device has lead that is connected with power supply through hole so that electric field is formed between upper electrode plate and lower electrode plate in vertical direction.

ZHANG J, XU S, SUN Y, GAO Z, LUO J