国家/地区 韩国（16）
IPC部 C（16）
IPC大类 C01（16） H01（8） C23（7）
B32（2） G03（2）
IPC小类 C01B（16）
IPC C01B032/186（9） C23C016/26（6） C01B032/182（4）
H01L021/02（4） C23C016/02（3） C23C016/50（3）
C23C016/513（3） H01L029/16（3） C01B021/064（2）
C01B031/04（2） C01B032/184（2） C01B032/194（2）
C23C016/511（2） C23C016/56（2） G03F001/22（2）
发明人 KIM C（16）
公开年 2020（5） 2022（4） 2021（3）
申请年 2020（4）  2019（3）  2022（3）  2021（2） 
专利权人 SAMSUNG ELEC.（9） FINE SEMITEC.（2） KOREA INST S.（2）

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Two-dimensional microporous graphene for e.g. energy storage materials e.g. electrode active materials, electronic materials e.g. quantum dots, and membranes or films e.g. separator and chemical detector, has preset average pore size, interpore spacing, and standard deviation of interpore spacing.

KIM C, CHOI M, KI C M, KIM C H

Pellicle film used for extreme UV lithography, comprises boron nitride nanostructure layer.

CHOI J H, CHO S J, YU L, KIM C, LEE S Y, SEO K W, KIM K S, MOON S Y, KIMCHUNG, SEO K

Graphene quantum dot pattern useful for bio-imaging, contrast agent and drug carrier, comprises graphene quantum dots uniformly patterned on substrate through ion beam irradiation.

HA J M, LEE S H, LEE C Y, HWANGYONGSUK, SUK J, KIM C

Pellicle film used in extreme UV lithography, comprises carbyne layer containing structure in which carbyne molecules are entangled by applying coating solution prepared by mixing carbyne molecules and solvent and drying.

CHOI J H, CHO S J, YU L, KIMCHUNG, SEO K, KIM K S, LEE S Y, MOON S Y, KIM C, SEO K W

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Method for forming graphene, involves preparing a substrate in a reaction chamber, performing a first growth process of growing multiple graphene aggregates apart from each other on the substrate at a first growth rate.

CHO Y, LEE C, KIM C, SHIN H, SHIN K, NGUYEN V L, SHIN K W, SHIN H J, LEE C S, CHO Y C

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Graphene formation involves forming carbon monolayer on substrate by injecting reaction gas into reaction chamber, where former reaction gas comprises source being carbon source and including component.

SHIN H, SHIN K, KIM C, NAM S, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, SHIN H J, SHIN K W, NAM S G, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C