国家/地区 台湾（10）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B031/04（9） C23C016/26（6） C01B031/02（4）
C01B032/182（4） C23C016/46（4） B82Y030/00（3）
B82Y040/00（3） C01B032/16（3） C23C016/455（3）
B82B003/00（2） C01B032/05（2） C01B032/168（2）
C01B032/18（2） C01B032/186（2） C23C014/06（2）
发明人 FAN S（2） JIANG K（2） JOUVRAY A（2）
LIN X（2） LIU P（2） TEO K B K（2）
WANG J（2）
公开年 2015（7） 2016（3）
申请年 2014（10）
专利权人 AIXTRON SE（2） FAN S（2） HON HAI PREC.（2） HONGFUJIN PR.（2）
JIANG K（2） LIN X（2） LIU P（2） UNIV TSINGHU.（2）

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Carbon fiber film comprises carbon nanotube film containing carbon nanotubes joined end to end and extending along a same direction in which each carbon nanotube is joined with graphene sheets.

JIANG K, WANG J, FAN S, LIN X, LIU P

Graphene manufacturing method by which high quality and large-area of continuous graphene layer can be directly generated on metal or nonmetal substrate.

HU C, HU C L

Manufacture of carbon nanotube composite wire, involves providing carbon nanotube array, drawing carbon nanotube film from carbon nanotube array using tool, and treating carbon nanotube film using graphene solution.

LIN X, WEI H, LIU P, ZHANG L, JIANG K, FAN S

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Forming graphene, useful as e.g. electrical or thermal conductive substrate, comprises placing and heating a substrate within reaction chamber, introducing carbon precursor into chamber, and forming graphene layer on surface of substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Method of preparing graphene from methane using catalyst in a reactive furnace.

CHEN M, CHEN B, KOO H, CHEN B F, KOO H S

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Manufacture of graphene film used for e.g. semiconductor, involves arranging substrate, providing metallic catalytic material and reducing gas, raising temperature, providing carbon-containing gas, and generating carbon atoms.

YEN W, CHUEH Y, YEN W C, CHUEH Y L