国家/地区 中国（10） 日本（2） 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（15）
IPC大类 C23（15）
IPC小类 C23C（15）
IPC C23C014/06（15）
发明人
公开年 2018（9） 2019（4） 2020（2）
申请年 2018（15）
专利权人

Forming semiconductor structure involves providing a substrate, forming plasma by inductive coupling bombards a graphene target, and sputter depositing diamond-like carbon film on the substrate.

CHEN G

Graphene laminated substrate for thermal radiation equipment, comprises graphene with equalized anisotropy, and amorphous carbon film or boron nitride film provided on each opposite surface perpendicular to lamination direction.

TATSUTA M, FUJIWARA K

Metal heat sink comprises a substrate, multiple metal plates positioned on the substrate and deposited by metal of the same material, and graphene inserted between the metal plate.

KIM K, KWANGJIN O, YEOM G Y, KIM T H, LEE S J

Corrosion-resistant coating for injection mold, comprises corrosion-resistant layer formed by electrodeposition on mold base, and wear-resistant function layer formed on corrosion-resistant bonding layer as nickel oxide and graphene coating.

CHEN J

Method for producing permanent graphene coatings on metals, involves obtaining low-temperature durable thin-layer graphene coatings on metal substrates of complex objects, where smooth metal surface using cold plasma device is covered.

ZIMNIAK Z

High-heat radiation thin film for use as heat radiation material for e.g. electronic device, comprises carbon layer arranged on metallic board, where thickness of metallic board is specific value and carbon layer is made up of graphene.

MIN E H, CHO S H, CHOI B K, HONG M E, HO C S, KEUN C B, CHO S

Preparing graphene-based metal composite antistatic film comprises heating the base polymer, extruding, placing copper source into the evaporation chamber, performing chilling deposition and overlapping the three-dimensional graphene.

CHEN Q, ZAN H

Preparing a superconducting graphene coating involves placing workpiece in an ultrasonic cleaning device, followed by ultrasonic degreasing cleaning, pure water ultrasonic cleaning, pure water rinsing, and water removal.

HAN Z, GAO H, WEI K

Preparing graphene/metal composite material useful for high speed train insulated gate bipolar transistor packaging comprises e.g. preparing graphene oxide dispersion, coating layer of metal boron and titanium on surface of graphene film.

CHU K, WANG F, HUANG D, LI Y

Method for producing graphene, involves placing substrate in vacuum chamber, and heating graphite to sublimation under vacuum and depositing graphite on substrate after sublimation.

WANG W