国家/地区 中国（14） 美国（7） 欧洲专利局（EPO）（3） 日本（2） 韩国（2） 世界知识产权组织（2）
IPC部 C（21）
IPC大类 C30（21） C01（7） C23（7）
H01（7） B82（4） G01（2）
IPC小类 C30B（21）
IPC C30B029/02（10） C30B025/18（7） C30B029/64（7）
B82Y040/00（4） C23C016/26（4） C30B025/00（4）
C30B025/02（4） B82Y030/00（3） C01B032/182（3）
C01B032/184（3） C23C016/54（3） C30B001/02（3）
H01L021/02（3） H01L029/16（3） C01B032/188（2）
发明人 LI Z（3） ZHANG Y（3） DUAN Y（2）
HUANG D（2） LI X（2） LIU K（2）
LIU Z（2） PENG H（2） SHI H（2）
WANG E（2） WU J（2） WU M（2）
XU X（2） YU D（2） YU J（2）
公开年 2018（12） 2017（9）
申请年 2017（21）
专利权人 UNIV PEKING（4） CHONGQING GR.（2）

Nitrogen-doped large single crystal graphene film used as transparent conductive film for e.g. transparent electrode, is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen.

LIU Z, PENG H, LIN L, SUN L, ZHANG J

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K

Growing thickness of reduced graphene oxide comprises dispersing reduced graphene oxide powder, adding metal nano powder to obtain dispersed mixture, drying dispersed mixture, and heating.

JEE Y H, LEE S H, KIM K W

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Preparation of single layer polycrystalline graphene film used for e.g. nano-electronic device, involves annealing metal substrate, changing growth atmosphere, introducing carbon source gas and adjusting grain size of graphene film.

REN W, MA T, CHENG H

Microfluidic device for X-ray scattering or diffraction, comprises a top layer comprising top support layer and top layer(s) of graphene, a bottom layer comprising bottom support layer and bottom layer(s) of graphene, and a middle layer.

SUI S, WANG Y, DIMITRAKOPOULOS C, PERRY S L

Heat dissipation system used in e.g. power tool and microelectronic or telecommunication device, comprises heat spreader comprising unitary graphene monolith comprising closely packed and chemically bonded parallel graphene oxide planes.

ZHAMU A, XIONG W, JANG B Z

Graphene epitaxial growth device comprises e.g. gas transportation system, epitaxial growth reaction chamber system, tail gas processing system, safety support system, cooling system, automatic control system utilized for supplying gas.

GUAN H

Semiconductor structure having multiple-porous graphene layer, includes gallium nitride layer formed on multiple-porous graphene layer which is formed on semiconductor substrate.

LAI C, TAN C, SINGH P, LAI C S

Preparing phthalocyanine monocrystalline thin films on graphene substrate modified by copper film comprises e.g. cutting the copper-based graphene, annealing, heating, and naturally cooling, and loading graphene substrate.

DOU W