国家/地区 中国（24）
IPC部 C（24）
IPC大类 C30（24） H01（9） C23（6）
C01（3） C25（2）
IPC小类 C30B（24）
IPC C30B025/18（13） C30B029/02（12） C30B025/02（5）
H01L021/02（5） C30B025/00（4） C30B029/40（4）
H01L021/205（4） C23C016/26（3） C23C014/06（2）
C23C014/35（2） C23C016/02（2） C30B023/02（2）
C30B025/16（2） C30B028/14（2） C30B029/04（2）
发明人 ZHANG J（24）
公开年 2022（5） 2014（4） 2013（3） 2017（3） 2016（2） 2018（2） 2020（2） 2023（2）
申请年 2013（4）  2016（4）  2022（4）  2012（3）  2018（3）  2021（3）  2017（2） 
专利权人 UNIV XIDIAN（12） CHINESE ACAD.（2） SHANDONG BEN.（2） UNIV PEKING（2）
UNIV SHANDON.（2）

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

Preparing enhanced reduction graphene oxide/carbon nanotube/pyrolytic carbon composite material involves subjecting graphene oxide/carbon nanotube foam to high-temperature thermal reduction to obtain reduced graphene oxide/carbon nanotube foam.

SHAO D, WANG S, LI Y, YANG J, JIA X, SONG H, WANG C, WEI P, ZHANG J, DING S, FENG L

Phased array antenna useful for producing MPCVD single diamond, comprises molybdenum support provided with the driving mechanism for driving the circular plate and the temperature insulation plate provided with the cooling mechanism for cooling outside the reaction preparation tank.

HU F, ZHANG J

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Preparation of ultrathin beta-radiation source for micro-components, involves using polymethyl methacrylate/graphene film and platinum sheet, and depositing beta-radiation source on graphene using solution of e.g. beta-radiation source.

ZHANG J, LI C, WANG X, XU P, FENG H, CHEN Z, YANG Y, WU W, ZHOU C, LUO T

Transferring gallium oxide epitaxial layer based on van der Waals film comprises e.g. using chemical vapor deposition to make polycrystalline continuous graphene film, extending gallium oxide on graphene film and adhering thermal release adhesive tape to gallium oxide epitaxial layer upper surface.

HAO Y, MA P, ZHANG J, WANG D, CHEN D, NING J

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J

Preparing gallium nitride/aluminium gallium nitride (GaN/AlGaN) heterojunction material based on single crystal diamond substrate involves selecting single crystal diamond substrate, coating graphene layer on crystal diamond substrate.

REN Z, ZHANG Y, ZHANG J, NING J, HAO Y

Preparing continuous single-layer single-crystal graphene film comprises electrochemically polishing the single crystal copper, then further performing graphene growth on the single crystal copper substrate.

WU B, ZHANG J, LIU Y

Nitrogen-doped large single crystal graphene film used as transparent conductive film for e.g. transparent electrode, is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen.

LIU Z, PENG H, LIN L, SUN L, ZHANG J