国家/地区 中国（13）
IPC部 C（13）
IPC大类 C30（13） H01（6） C23（4）
IPC小类 C30B（13）
IPC C30B023/02（13）
发明人 WANG W（4） CHEN X（3） CHEN D（2）
CHEN Z（2） GUO L（2） SHEN B（2）
YANG X（2） ZHANG J（2） ZHANG Z（2）
公开年 2023（3） 2010（2） 2020（2） 2021（2）
申请年 2021（4）  2010（2） 
专利权人 CHINESE ACAD.（4） UNIV PEKING（2）

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Visible-near infrared wide spectrum photoelectric detector is independent device and/or integrated in circuit, and contains flexible substrate, transparent conductive electrode, active layer, p-type ohmic contact layer, upper electrode layer, and silicon nitride passivation layer.

CHEN H, WANG W, DENG Z, LI X, JIA H

Preparing low transmission loss single crystal copper material comprises e.g. forming single crystal copper layer on substrate i.e. graphene layer surface, and peeling off single crystal copper layer from substrate in mixed gas atmosphere of argon and hydrogen.

WANG E, YUE X, HUANG Z, HE M, ZHANG Z, DING Z

Transferring gallium oxide epitaxial layer based on van der Waals film comprises e.g. using chemical vapor deposition to make polycrystalline continuous graphene film, extending gallium oxide on graphene film and adhering thermal release adhesive tape to gallium oxide epitaxial layer upper surface.

HAO Y, MA P, ZHANG J, WANG D, CHEN D, NING J

Preparing cerium-doped topological insulator bismuth telluride single crystal thin film involves using cerium source, bismuth source and tellurium source as evaporation source, degassing substrate, and transferring substrate.

TENG P

Growing single crystal gallium nitride film on arbitrary self-supporting substrate involves nitride deposition on any self-supporting substrate, transferring the two-dimensional material with single crystal hexagonal structure.

YANG X, SHEN B, LIU D, SHEN J, CAI Z, CHEN Z, MA C

Composite seed crystal useful for aluminum nitride single crystal growth comprises aluminum nitride ceramic substrate, graphene thin layer on aluminum nitride ceramic substrate and aluminum nitride thin film on graphene thin layer.

GUO L, HU W, WANG W, CHEN X

Ferromagnetic/graphene/ferromagnetic heteroepitaxial film has graphene layer that is directly epitaxially grown on first heteroferromagnetic layer, and second heteroferromagnetic layer is epitaxially grown on graphene layer.

PAN M, PENG J, HU Y, LI P, QIU W, HU J, CHEN D

Preparing cadmium zinc telluride film (CdZnTe) by directional growth on a graphene substrate comprises washing copper foil, placing in CVD growth chamber, heating, cooling, polishing, annealing, and immersing.

HUANG J, GU Q, ZHOU X, YANG F, ZOU T, TANG K, HUANG H, WANG L

Preparing germanium quantum dot used in photodetector element, by cleaning substrate to remove contaminants, transferring single atomic graphene layers on cleaned substrate and growing germanium quantum dot on graphene layer.

YANG Y, WANG R, ZHANG Z, ZHANG J