国家/地区 中国（16） 日本（3） 美国（3） 世界知识产权组织（3） 英国（2） 韩国（2） 台湾（2）
IPC部 C（25）
IPC大类 C30（25） C23（11） C01（8）
H01（7） B01（2） C22（2）
IPC小类 C30B（25）
IPC C30B029/02（25）
发明人 XU X（3） CHEN X（2） DIXON S（2）
GUINEY I（2） LI X（2） LIU Z（2）
SHAO C（2） XIAO L（2） XIE X（2）
ZHANG J（2）
公开年 2022（25）
申请年 2021（13）  2022（12） 
专利权人 BEIJING GRAP.（2） PARAGRAF LTD（2） SHANGHAI INS.（2） UNIV PEKING（2）
UNIV SHANDON.（2）

Growing graphene nanoribbon involves depositing aromatic molecular seeds from gas phase onto surface of growth substrate, and growing graphene nanoribbon from aromatic molecular seeds via chemical vapor deposition, where growth substrate is germanium substrate.

JACOBBERGER R M, WAY A J, ARNOLD M S

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Preparing single crystal domain and polycrystalline domain graphene useful in technical field of basic research and graphene, comprises heating graphene film under an air atmosphere and annealing.

ZHENG Q, MA M, HUANG J, YU Z, HE Y

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Preparing composite dimension carbon atom framework van der Waals homogeneous structure temperature control physical defogging film comprises e.g. preparing powder-shaped carbon nanotube material, spraying cellulose acetate by connecting cellulose acetate solution and obtaining defogging film.

JIANG X, DONG H, TIAN B

Preparing a copper single wafer, comprises e.g. performing oriented growth by taking the seed crystal as nucleation center in the traction process to obtain a single crystal copper rod with determined orientation, and fixing the single crystal copper rod on line cutting support and cutting.

XIAO L, HAN L, ZUO T, GAO Z, RU Y, XUE J

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN