国家/地区 中国（10） 英国（2） 台湾（2） 世界知识产权组织（2）
IPC部 C（14）
IPC大类 C30（14） H01（14） C23（7）
C01（3）
IPC小类 C30B（14）
IPC H01L021/02（14）
发明人 DIXON S（2） FENG H（2） GUINEY I（2）
HAO Y（2） MA P（2） NING J（2）
PAN Y（2） TANG J（2） WANG D（2）
WANG Y（2） ZHANG J（2）
公开年 2022（14）
申请年 2021（8）  2022（6） 
专利权人 CEC COMPOUND.（2） PARAGRAF LTD（2） UNIV XIDIAN（2）

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Nitride templates based on metal substrates comprises metal substrate, two-dimensional material film, which is located on metal substrate one side, inert material pattern mask layer, nitride epitaxial layer, which is located on inert material pattern mask layer side away from the metal substrate.

ZHANG S, BEN J, JIANG K, LI D, CHEN Y, SUN X

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Epitaxially growing large area gallium nitride used in field of semiconductor comprises growing graphene two-dimensional material layer on copper (111) single crystal substrate, epitaxially growing gallium nitride film and cooling gallium nitride film to room temperature.

MA Y, YANG J, KONG W

Method for remote epitaxial growth of nitride single crystal thin film based on ferroelectric material substrate comprising adjusting temperature of ferroelectric material substrate, and cooling ferroelectric material substrate.

XU K, WANG J, WANG Y, XU Y, QU Y