国家/地区 韩国（10） 美国（8） 世界知识产权组织（8） 中国（7） 欧洲专利局（EPO）（7） 日本（6） 法国（3）
IPC部 C（17）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C30B029/36（17）
发明人 JANG H（2） LEE D（2） LEE S（2）
OH E（2） OUERGHI A（2）
公开年 2015（3） 2009（2） 2012（2） 2013（2）
申请年 2008（2）  2009（2）  2011（2）  2012（2）  2013（2） 
专利权人 CENT NAT REC.（2） LG CHEM LTD（2）

Method for preparing micro-nano materials comprise e.g. introducing sacrificial carrier into slurry containing raw materials and auxiliary agents, shaping and drying to form mixture, synthesizing preform to prepare porous body made of micro-nano materials, and performing dispersion operation.

LI Q

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Preparation of silicon carbide graphene substrate epitaxial material by growing silicon carbide base layer, growing silicon carbide-graphene layer and preparing special device to process silicon carbide-graphene composite layer.

Manufacture of graphene precursor-containing silicon carbide substrate involves forming graphene precursor by heating silicon carbide substrate, and forming structure including molecular layers having carbon dangling bonds.

KANEKO T, KUTSUMA Y, DOJIMA D

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Producing monocrystalline graphene, comprises producing base material containing metal thin film using high temperature generator, and supplying carbon source, and contacting high temperature part with carbon source.

OH E, LEE D, LEE S, JANG H

Manufacture of monocrystalline graphene involves forming high-temperature portion on substrate with metal thin film using high-heat generating device, supplying carbon source, and contacting carbon source with high-temperature portion.

OH E, LEE D, LEE S, JANG H

Growing graphene on a substrate, comprises forming a metal oxide layer on substrate using reactive metal oxide to prepare structure, and growing graphene by heat treatment, while exposing the structure to gas containing carbon.

CHOI J W

Forming graphene layer on surface of substrate, comprises gradually heating substrate until sublimation of silicon of first row of atoms of free surface of silicon-carbide film, where free surface of silicon layer is stepped.

OUERGHI A