国家/地区 中国（48）
IPC部 C（48）
IPC大类 C23（48）
IPC小类 C30B（48）
IPC C30B029/02（48）
发明人 WANG H（4） ZHANG Y（4） BI H（3）
JIN H（3） LI Z（3） LIU Z（3）
PENG P（3） SHI H（3） VEERASAMY V（3）
VEERASAMY V S（3） CHEN Z（2） DUAN Y（2）
HU J（2） HU Y（2） HUANG D（2）
公开年 2012（8） 2011（5） 2017（5） 2022（5） 2015（4） 2016（4） 2020（4） 2021（4） 2013（2） 2014（2） 2018（2） 2023（2）
申请年 2012（6）  2016（6）  2020（6）  2022（5）  2011（4）  2013（4）  2015（4）  2021（4）  2017（3）  2009（2）  2014（2） 
专利权人 SHANGHAI INS.（5） GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）
CHANGZHOU ER.（2） CHINESE ACAD.（2） CHONGQING GR.（2） PENG P（2）
UNIV NAT DEF.（2） WUXI GEFEI E.（2）

Preparing single crystal graphene/two-dimensional cuprous telluride heterojunction surface-enhanced Raman spectroscopy substrate useful in surface-enhanced Raman spectroscopy, comprises etching copper film on single-crystal graphene, heating in tellurium source and molecular sieve and reacting.

CHANG K, HUANG M, WANG H, CHEN K

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Preparing single crystal domain and polycrystalline domain graphene useful in technical field of basic research and graphene, comprises heating graphene film under an air atmosphere and annealing.

ZHENG Q, MA M, HUANG J, YU Z, HE Y

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z

Synchronous doping method in chemical vapor deposition graphene growth process involves doping trace elements on surface of copper foil, carrying out annealing to form substrate, transferring substrate into furnace, adding reaction gas to enable carbon, gradually depositing and growing on substrate.

ZHANG L, YANG G, ZHENG Y, LUO G, TU R, ZHANGCHI T

Preparation of ultrathin beta-radiation source for micro-components, involves using polymethyl methacrylate/graphene film and platinum sheet, and depositing beta-radiation source on graphene using solution of e.g. beta-radiation source.

ZHANG J, LI C, WANG X, XU P, FENG H, CHEN Z, YANG Y, WU W, ZHOU C, LUO T

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Vapor-deposited graphene layer growth preparation device comprises high-vacuum sealing plug-in valve transversely arranged on upper part of sealed cavity near top, thermal field base fixedly installed at bottom of sealed cavity.

ZHAO B, FU S, ZHANG H