国家/地区 中国（27）
IPC部 C（27）
IPC大类 C30（27）
IPC小类 C30B（27）
IPC C30B029/02（16） C30B025/18（11） C23C016/26（9）
C30B025/02（8） C01B031/04（5） C01B031/02（4）
C23C016/02（3） H01L021/02（3） C23C016/52（2）
C23C016/54（2） C23C016/56（2） C30B029/04（2）
C30B029/20（2） C30B033/02（2）
发明人 ZHANG Y（27）
公开年 2012（11） 2015（3） 2017（3） 2022（3）
申请年 2012（11）  2017（3）  2014（2）  2015（2）  2021（2）  2022（2） 
专利权人 UNIV XIDIAN（14） SHANGHAI INS.（5） CHONGQING GR.（2）

Manufacture of ultra-low absorption sapphire involves doping substance that reduces absorption coefficient of sapphire into aluminum oxide to form mixture, placing mixture into crucible, vacuumizing and heating, necking and seeding, shouldering, performing isometric growth, cooling and annealing.

ZHANG Y, WANG Y, HUANG C, CHEN J, GAO C, ZHAO P, ZHOU N, CHENG G

Reusing garnet substrates in single crystal epitaxial growth, comprises cleaning garnet single crystal substrate, forming double-layer graphene structure on cleaned garnet single crystal substrate, using pulsed laser deposition method to grow garnet seed crystal layer on single crystal substrate.

ZHANG H, ZHANG Y, YU J, ZHANG D, LI H, YANG Q

Preparing high purity single crystal graphene in large scale, involves preparing silk fibroin solution, dropping on quartz sheet, spin coating, drying, placing quartz sheet and high molecular carbon-containing organic film in reaction cavity, processing, calcining, naturally cooling and taking out.

ZHANG Y, ZHENG P, ZHENG L, CHEN W, ZHENG H

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J

Preparing gallium nitride/aluminium gallium nitride (GaN/AlGaN) heterojunction material based on single crystal diamond substrate involves selecting single crystal diamond substrate, coating graphene layer on crystal diamond substrate.

REN Z, ZHANG Y, ZHANG J, NING J, HAO Y

Growing large mismatched indium gallium arsenide material involves covering layers of graphene on mismatched substrate, placing in growth chamber of gaseous source molecular beam epitaxy system, introducing arsine and pyrolyzing.

GU Y, WANG H, ZHANG Y, SHAO X, LI X, GONG H

Graphene growth device with high temperature process chamber, has high temperature process chamber and receiving cooling chamber guide roller that are finally wound onto graphene substrate receiving roller.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Heteroepitaxial diamond comprises heterogeneous substrate, graphene flexible layer used as flexible intermediate layer for growing diamonds on heterogeneous substrate, and diamond layer which is epitaxially grown on diamond layer.

YU W, JIN P, ZHANG Y, WANG Z

High temperature process chamber vertical arrangement of graphene continuous growth apparatus, has second high temperature process chamber and receiving cooling chamber guide roll received on graphene substrate receiving roll.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y