国家/地区 中国（12）
IPC部 C（15）
IPC大类 C30（15） C01（3） H01（3）
C23（2） G01（2）
IPC小类 C30B（15）
IPC C30B029/02（7） C01B032/186（3） C30B025/00（3）
C30B025/02（3） C30B025/18（3） H01L021/02（3）
C30B007/14（2） C30B029/06（2） C30B033/10（2）
G01N027/26（2）
发明人 JU Q（2） LI X（2） MA Y（2）
WANG J（2） WANG W（2） ZHANG S（2）
公开年 2019（15）
申请年 2019（12）  2018（2） 
专利权人 SHANGHAI INS.（3）

Preparing epitaxial growth of metal organic framework surface by matching two-dimensional material templates with lattice symmetry involves using e.g. graphene single crystal, graphene thin film, graphene nanosheets, methane, and hydrogen.

SUN Z, HU A

Electro-microfluidic device used in e.g. X-ray scattering or diffraction analysis includes top layer(s) of graphene, bottom layer(s) of graphene, optically clear top window area, optically clear bottom window area, cathode, and anode.

PERRY S L, SUI S

Manufacture of graphene-based device used for e.g. gas sensor, involves providing graphene assembly, transferring graphene assembly to substrate, using photolithography and removing UV barrier layer and photoresist layer.

MIGLIORATO M, KUMAR R, MONTEVERDE U

Sapphire with wider dielectric constant adjusting range is obtained from aluminum oxide and graphene.

CHENG G, LU T, QI J, HUANG X, WEI N, SHI Y

Producing carbon structures containing graphene on surface of spatially shaped metal elements made of copper or its alloys, in chemically active gas working atmosphere containing inert shielding gas, by soaking materials in sealed retort.

BABUL T, OBUCHOWICZ Z, JONCZYK S, BARANOWSKI M, KONDEJ A

Preparation of wafer-level graphene single crystal involves placing plasma-processed metal foil in reaction furnace, heating, introducing hydrogen, annealing, introducing carbon source, adjusting annealing temperature and cooling.

HUANG F, CHENG Y, BI H

Preparation of single crystal graphene for semiconductor material, involves annealing copper- and nickel-deposited substrate to obtain alloy substrate sample, oxidizing substrate sample, performing chemical vapor deposition, and cooling.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Preparing large-sized high-quality single-layer graphene involves drying frosted glass after washing, and uniformly coating liquid phase substrate on surface, and coating frosted glass with liquid phase substrate.

LU C, YE G, LI L, YU S, ZHAO X

Method for growing large-area single crystal graphene, involves using nozzle corresponding to substrate pattern to carry out fixed point carbon source transportation and passing methane for fixed point nucleation for graphene growth.

LAN F, WANG Z, ZHANG S, DONG Z, HAO J

Preparing silicon/silicon carbide/graphene material involves pretreating single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming.

TU R, HU Z, ZHANG S, ZHANG L