国家/地区 中国（13）
IPC部 C（13）
IPC大类 C30（13） C23（5） C01（2）
H01（2）
IPC小类 C30B（13）
IPC C30B029/02（13）
发明人 LI J（2） LI Y（2） LIU Z（2）
LUO G（2） ZHANG X（2） ZHAO Y（2）
公开年 2022（8） 2023（5）
申请年 2022（13）
专利权人 SHANGHAI INS.（2）

Preparation of single crystal graphene film for forming electronic devices, involves laminating copper foil and base metal foil, heating, performing roll-to-roll monocrystalline graphene film growth on molten copper foil, and growing roll-to-roll single crystal graphene film.

LUO G, WANG G, WANG X, LI J, ZHANG B

Preparing graphene crystal using plasma enhanced chemical vapor deposition device involves placing insulating substrate in synthesis chamber, pumping synthesis chamber to vacuum, introducing growth gas, generating plasma and transversely growing graphene small crystal nucleus on insulating substrate.

MA S, LIU B

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Preparing low transmission loss single crystal copper material comprises e.g. forming single crystal copper layer on substrate i.e. graphene layer surface, and peeling off single crystal copper layer from substrate in mixed gas atmosphere of argon and hydrogen.

WANG E, YUE X, HUANG Z, HE M, ZHANG Z, DING Z

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Preparing single crystal domain and polycrystalline domain graphene useful in technical field of basic research and graphene, comprises heating graphene film under an air atmosphere and annealing.

ZHENG Q, MA M, HUANG J, YU Z, HE Y

Preparing a copper single wafer, comprises e.g. performing oriented growth by taking the seed crystal as nucleation center in the traction process to obtain a single crystal copper rod with determined orientation, and fixing the single crystal copper rod on line cutting support and cutting.

XIAO L, HAN L, ZUO T, GAO Z, RU Y, XUE J

Controlling grain boundary angle of two-dimensional material, involves providing substrate with specific crystal orientation and growing two-dimensional material by chemical vapor deposition on substrate.

LIN L, SUN L, LIU H, LI Y, LIU Z

Preparing growth graphene of doped germanium single crystal involves using horizontal gradient condensation method to synthesize germanium, cutting polycrystalline germanium, cutting polycrystalline germanium, crucible, quartz tube, quartz cap for cleaning, then processing dry, putting seed crystal.

LI Z