国家/地区 中国（10） 美国（9） 世界知识产权组织（6） 日本（4） 欧洲专利局（EPO）（3） 韩国（3） 加拿大（2） 印度（2）
IPC部 C（15）
IPC大类 C23（15）
IPC小类 C23C（15）
IPC C30B029/02（6） C23C016/26（5） H01L021/02（5）
C30B029/40（4） C01B032/186（3） C23C016/02（3）
C23C016/44（3） B32B009/00（2） B32B009/04（2）
B82Y030/00（2） C23C016/04（2） C23C016/34（2）
C23C016/40（2） C23C016/455（2） C23C016/50（2）
发明人
公开年 2021（15）
申请年 2020（7）  2021（7） 
专利权人

Long-life guide cylinder comprises e.g. outer layer as pre-oxidized felt insulating felt, middle layer as modified resin formed on inner side wall of outer layer, and inner layer as carbon/carbon composite material formed on inner side wall of middle layer.

BAI Y, QIN X, LIU Y, ZHOU J

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Preparation of graphite thermal field material surface-coated with tantalum carbide coating for high temperature third-generation semiconductor crystal growth furnace, involves high-pressure water treating graphite surface, plasma spraying tantalum powder, infiltrating graphite, and carbonizing.

TANG B, WU X

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Radiating table designed with special water channel of alloy material, has heat dissipation pipe fitting to water pipe through groove, heat dissipation platform provided with several waterway annular grooves communicated with water pipe through groove.

ZHAO J, HU C, HU C Q, ZHAO J H

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Preparing gallium nitride homogenous substrate comprises e.g. preparing polycrystalline gallium nitride substrate, coating metal gallium film, ammoniating, amorphizing, transferring, ammonifying, depositing, growing and removing.

TAN X, TAN Q, JIANG B

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Vapor-deposited graphene layer growth preparation device comprises high-vacuum sealing plug-in valve transversely arranged on upper part of sealed cavity near top, thermal field base fixedly installed at bottom of sealed cavity.

ZHAO B, FU S, ZHANG H

Multi-chamber semiconductor thin film epitaxy device comprises growth chambers and mechanical arm, where growth chambers have graphene and semiconductor material growth chamber, where graphene growth chamber used to grow graphene film.

GUO L, WEI T, RAN J, WANG J