国家/地区 中国（109）
IPC部 C（109）
IPC大类 C30（109） H01（44） C23（38）
C01（17） B82（8） C25（5）
B01（3） B32（2） C22（2）
IPC小类 C30B（109）
IPC C30B025/18（109）
发明人 ZHANG J（13） ZHANG Y（11） XU X（10）
WANG D（8） ZHANG Z（8） HAO Y（7）
NING J（7） CHEN X（6） CHEN Z（6）
LI X（6） LIU K（6） SUN L（6）
WANG H（6） WANG Y（6） LEI T（5）
公开年 2022（21） 2021（13） 2016（11） 2023（10） 2015（9） 2017（9） 2012（8） 2013（7） 2020（6） 2014（5） 2011（4） 2018（3） 2019（3）
申请年 2021（22）  2022（15）  2016（12）  2012（11）  2015（9）  2020（8）  2014（6）  2013（5）  2017（5）  2018（5）  2011（4）  2019（3）  2023（2） 
专利权人 UNIV PEKING（13） UNIV XIDIAN（12） UNIV SHANDON.（7） SHANGHAI INS.（6）
CHINESE ACAD.（3） CHINESE ACAD.（3） CHINESE ACAD.（3） INST SEMICON.（3）
UNIV FUDAN（3） BEIJING GRAP.（2） CEC COMPOUND.（2） HON HAI PREC.（2）
HONGFUJIN PR.（2） JIANGSU ADVA.（2） SHANGHAI TEC.（2） SUZHOU INST .（2）
UNIV BEIJING.（2） UNIV HENAN（2） UNIV NANJING（2） UNIV TSINGHU.（2）

Reducing damage to substrate when using plasma-enhanced atomic layer deposition to grow thin film involves depositing oxide film on cleaned substrate using water/ozone source and metal source, and depositing nitride film using plasma source.

HU Y, ZHU X, TIAN F, YANG J, LIU H, QIU P, WEI H, ZHENG X, QIU H

Preparation of single crystal graphene film for forming electronic devices, involves laminating copper foil and base metal foil, heating, performing roll-to-roll monocrystalline graphene film growth on molten copper foil, and growing roll-to-roll single crystal graphene film.

LUO G, WANG G, WANG X, LI J, ZHANG B

Preparing single crystal graphene/two-dimensional cuprous telluride heterojunction surface-enhanced Raman spectroscopy substrate useful in surface-enhanced Raman spectroscopy, comprises etching copper film on single-crystal graphene, heating in tellurium source and molecular sieve and reacting.

CHANG K, HUANG M, WANG H, CHEN K

Van der Waals epitaxy method of high-quality aluminum gallium nitride materials on amorphous substrate, comprises e.g. transferring and processing first two-dimensional material layer on amorphous substrate, transferring second material layer on processed layer, performing hydrogenation passivation.

LI D, JIANG K, BEN J, ZHANG S, CHEN Y, LYU B, SUN X

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Preparing three-dimensional homogeneous epitaxial structure used in preparation of optoelectronic device or electronic device, involves covering two-dimensional material layer on surface of nitride single crystal substrate, and processing one micro nano-scale blind hole on surface of material layer.

YAN Q, WANG G

Preparation of wafer-level self-supporting cadmium-tellurium thin film used in electronic device, involves cleaning two-dimensional material/sapphire substrate, assembling two-dimensional material/sapphire substrate and support by molten metal material, and growing cadmium telluride thin film.

WANG J, WANG X, TANG X, CAO H, BAI W

Method for rapidly growing double-layer graphene single crystal, by adding catalyst and polished copper foil into two quartz boats, annealing the copper foil in a vacuum atmosphere, passing hydrogen and carbon dioxide into quartz tube, and removing the copper foil from the center of tube furnace.

TANG C, GONG P, SUN Z

Visible-near infrared wide spectrum photoelectric detector is independent device and/or integrated in circuit, and contains flexible substrate, transparent conductive electrode, active layer, p-type ohmic contact layer, upper electrode layer, and silicon nitride passivation layer.

CHEN H, WANG W, DENG Z, LI X, JIA H