国家/地区 中国（10）
IPC部 C（10）
IPC大类 C30（10） H01（4） C01（2）
C23（2）
IPC小类 C30B（10）
IPC C30B029/02（10）
发明人 LIU Y（2） YU G（2）
公开年 2015（6） 2014（3）
申请年 2014（10）
专利权人 SHANGHAI INS.（2）

Manufacturing single crystal graphene wire involves using pure single crystal silicon carbide, and then providing obtained single crystal silicon carbide with electron beam bombardment and laser irradiation.

DUAN X

Flexible metal substrate device for growing graphene thin film, has reflective plate that is located on outer peripheral side of heater for reflecting heat chamber in inward direction.

CHEN Z, HU B, WU H, WU K, XU W, ZHANG H, ZHANG Y, XI M, YU G

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Preparation of highly crystalline graphene/hexagonal boron nitride with stacked structure comprises forming stack structure of graphene/hexagonal boron nitride, and carrying out heat treatment.

SHI D, WANG D, ZHANG G

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Method for growing graphene in sides of silicon carbon surface, involves connecting pneuma source with single crystal growing furnace, and reducing heating temperature of furnace to room temperature.

CHEN X, SUN L, XU X, YANG Z, ZHAO X

Method for preparing liquid copper substrate utilized for preparing large single crystal graphene in field effect transistor device, involves placing solid copper on copper-tungsten alloy substrate, and heating in hydrogen atmosphere.

LIU Y, WU B, WANG L, YU G, CHEN J

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Preparing graphene dendritic crystal involves preparing solution of graphene oxide placing solution in an electric graphite oxide reaction vessel and generating square wave electrical signal in an electrochemical reactor to form dendrite.

ZHANG D, LIU Y