国家/地区 中国（20）
IPC部 C（20）
IPC大类 C30（20） C01（7） C23（4）
B01（2） H01（2）
IPC小类 C30B（20）
IPC C30B029/02（20）
发明人 LI Y（3） LIU K（2） MANCEVSKI V（2）
SUN H（2） SUN L（2） VLADIMIR M（2）
WANG E（2） YU D（2） ZHANG Z（2）
公开年 2021（20）
申请年 2021（12）  2020（8） 
专利权人 SUN H（2） UNIV PEKING（2） UNIVERSAL MA.（2）

Cathode roller useful in electrolytic copper foil mechanism for preparing electrolytic copper foil, comprises annular base copper foil formed on peripheral wall of roll-shaped main body and is electrically connected to main body, and graphene film formed on surface of copper foil of base material.

WANG E, HE M, YUE X, HUANG Z, DING Z, ZHANG Z, LIU K

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Preparing single crystal graphene, comprises preparing single crystal graphene by chemical vapor deposition process, forming graphene nucleus on the substrate, and forming single crystal graphene on basis of graphene core.

WANG Y, LI Y, SUN L, LIU H, LIU Z

Growing single-layer single-crystal graphene based on copper (I) oxide dielectric layer, comprises polishing and cleaning the copper foil, introducing methane, heating and naturally cooling.

ZHAO X, LI Y, WANG P, SUN L, GUO X, ZHANG X, YU F

Elastic air-tight piece comprises elastic air-tight piece set at outlet end of preparation chamber and hermetically connected with outlet end of preparation chamber, where elastic air-tight piece is provided with conveying belt assembly.

SUN H

Method for reducing nucleation density of graphene, involves passing gas into quartz tube to normal pressure after vacuuming and turning OFF heating and gas supply of tube furnace and cooling tube furnace to room temperature after growth of graphene is completed.

YUAN L

Preparing two-dimensional single crystal material lamination with large size and interlayer corner comprises growing first and second two-dimensional single crystal material and introducing inert gas and reducing gas, heating and bonding.

LIU K, LIU C, WANG Q, GONG D, WANG E, YU D

Preparing double-layer single crystal graphene, involves placing carbon-containing compound and copper foil in corundum box, introducing argon and hydrogen, increasing flux of hydrogen, annealing copper foil, introducing methane, after growing double-layer single crystal graphene, naturally cooling.

XU X, LIANG Z, ZENG F, WANG R, TANG Z

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Chemical vapor deposition (CVD) graphene production device comprises movably connected support base, multiple graphene growth substrates and top cover, where support base is ring-shaped closed structure.

ZHANG B, LI J, WANG X, XU Z