国家/地区 中国（23）
IPC部 G（23） H（16） B（3）
C（3）
IPC大类 G01（23） H01（16） B81（2）
IPC小类 G01J（23）
IPC G01J005/20（23）
发明人 DU C（4） FENG S（4） HU H（4）
SHI H（4） WEI X（4） YANG J（4）
TANG L（3） CAI G（2） DI G（2）
FANG M（2） GAO J（2） HUANG L（2）
HUANG S（2） LIU C（2） LU H（2）
公开年 2021（11） 2018（6） 2016（4）
申请年 2021（9）  2018（5）  2015（3）  2016（2）  2020（2） 
专利权人 CHINESE ACAD.（4） JIANGSU XINC.（4） BEIJING NORT.（2） WUHAN GAOXIN.（2）

Method for manufacturing micro-bridge structure infrared detector, involves depositing first dielectric layer and second dielectric layer, and etching second dielectric layer to form patterned dielectric layer to form absorbing plate.

PAN H, WU P, DI G

Preparation method of a graphene-CMOS monolithic integrated detector chip, involves depositing isolation layer on surface of CMOS integrated circuit, and etching through hole in isolation layer to fill metal.

CHEN H, HUANG Y, ZHANG H, CHENG C, CHEN R, HUANG B

Temperature measuring device for graphene drilling processing, has angle rotating mechanism that drives thermal radiation receiving instrument to rotate along X, Z axis direction of processing main shaft.

LIU X

Germanium-doped long wave infrared terahertz detector array used in e.g. weather forecast, has absorption region array and common electrode which are located on front surface of wafer, and back electrode passivation layer located on barrier sheet electrode.

DAI N, YIN Z, SHAN Y, DOU W, LIU C, WANG Y, DENG H

Method of preparing multilayer structure infrared micro-bridge detector, involves depositing third metal interconnection layer and second dielectric layer, and etching third metal interconnection layer into second patterned electrode structure to form absorber plate.

PAN H, WU P, DI G

Piezoelectric resonant infrared sensor useful for array, comprises piezoelectric material whose upper surface is formed with quantum dot film which can respond to infrared light irradiation to accelerate temperature rise of piezoelectric material.

LUO J, ZHONG H, FENG L, GU K

Dual-mode non-refrigeration infrared detector heat-sensitive layer structure, has thermo-sensitive film layer provided with amorphous germanium silicon film, where sides of germanium silicon film are connected with vanadium oxide film.

HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S

Vanadium pentoxide heat-sensitive film with sandwich structure used for silicon-based semiconductor, comprises substrate layer, buffer layer, and heat-sensitive layer including vanadium pentoxide layers and carrier concentration increasing layer located between adjacent vanadium pentoxide layers.

HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S

Two-dimensional magnetic film heterojunction non-refrigeration infrared detector has top electrode layer, and transparent top gate insulating layer containing high-dielectric material e.g. hafnium dioxide and poly(methyl methacrylate).

LONG M, WANG R, SHAN L, LI F, HAN T

Superconducting transition-edge thermal sensor, comprises a superconducting film defining an active area (SC) for incidence of quanta there, in that superconducting film is made of a superconductor exhibiting a charge carrier density.

EFETOV D, SEIFERT P, LU X, DURAN J, STEPANOV P, EFETOV D K