国家/地区 美国（13）
IPC部 C（13）
IPC大类 C23（13）
IPC小类 C01B（10） C23C（9） H01L（9）
B32B（7） B05D（6） B82Y（4）
C23F（4） H01B（3） B01J（2）
B44C（2） H01M（2） H05K（2）
IPC C01B031/04（9） C01B031/02（6） H01L021/02（5）
C23F001/00（4） B32B009/00（3） B82Y030/00（3）
B82Y040/00（3） C23C016/26（3） H01L021/20（3）
B05D003/02（2） B05D003/06（2） B05D003/10（2）
B05D005/12（2） B44C001/22（2） C23C014/06（2）
发明人 CHOI J（2） HAQUE S（2） HAQUE S M（2）
LEHTINIEMI R（2） LEHTINIEMI R K（2）
公开年 2010（13）
申请年 2009（8）  2010（3）  2008（2） 
专利权人 NOKIA CORP（2） NOKIA TECHNO.（2） SAMSUNG ELEC.（2）

Electronic device comprises porous graphene layer including graphene nanoribbon and electrically connecting two graphene electrodes.

KAERKKAEINEN A M, HAQUE S M, COLLI A, PASANEN P M, JOHANNES K L M, UUSITALO M A, LEHTINIEMI R K, KARKKAAINEN A M, HAQUE S, KARKKAINEN L M J, KARKKAINEN L, UUSITALO M, LEHTINIEMI R, KARKKAINEN L M Y, KAERKKAEINEN L M J

Creating layers of graphene, comprises implanting carbon atoms into a substrate at first temperature and lowering temperature of the substrate, so that the carbon atoms diffuse from substrate.

RAMAPPA D A, SULLIVAN P, RAMAPPA D

Method for forming thin coating dielectric material on surface of carbon-based material e.g. graphene, involves forming ultra thin silicon nucleation layer of specific thickness on portion of surface of carbon-based material.

BABICH K, CALLEGARI A, CHEN Z, KIEWRA E, SUN Y

Processing of graphene sheet material during manufacture of electronic device, involves inactivating edge portion of graphene sheet material by irradiating material with ultraviolet light in atmosphere containing substance.

ASANO K

Method for providing electrical connection to portion of graphene layer used in e.g. microelectronic device, involves forming recess that create boundary between first portion of recess and second portion of recess.

HAQUE S, LEHTINIEMI R K, KARKKAINEN A M, LECHNER L, HAKONEN P, HAQUE S M, LEHTINIEMI R, KAERKKAEINEN A

Manufacture of graphene film used for manufacture of electronic device, involves contacting amorphous carbon film with metals chosen from gallium, indium, tin and antimony.

FUJITA JUNICHI, FUJITA J I, FUJITA J

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J

Graphene sheet, e.g. for transparent electrode used in solar cell includes intercalation compound interposed between unit graphene layers.

CHOI J, CHOI J Y

Graphene used for device and graphene sheet, comprises etched edge portion comprising functional group of carbonyl, carboxy, hydroxy, formyl and/or oxycarbonyl.

CHOI J, CHOI W M, HONG B H, CHOI W, HONG B

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C