国家/地区 德国（10）
IPC部 H（8） B（7） C（6）
IPC大类 H01（8） B82（5） B32（4）
C01（4） C09（3） B05（2）
C23（2）
IPC小类 B82Y（5） H01L（5） B32B（4）
C01B（4） B05D（2） C09K（2）
C23C（2） H01B（2）
IPC H01L051/05（5） B82Y040/00（4） C01B031/02（4）
H01L029/786（4） H01L051/30（4） B82Y030/00（3）
H01L021/336（3） H01L029/16（3） H01L029/66（3）
H01L029/78（3） H01L051/40（3） B32B009/00（2）
B82Y010/00（2） C01B031/04（2） H01L021/04（2）
发明人 LIN Y（2） LIN Y M（2） LOLLI G（2）
MLECZKO L（2） SCHLUETER O F（2） SCHLUETER O F K（2）
SCHLUTER O F（2） WOLF A（2）
公开年 2011（10）
申请年 2010（5）  2009（4） 
专利权人 IBM UK LTD（4） INT BUSINESS.（4） BAYER TECHNO.（2）

FET formation by depositing channel material comprising graphene or nanostructure on substrate, depositing contact material over channel material, gate, and spacers, and patterning contact material to form self-aligned contact for FET.

CHANG J, LAUER I, SLEIGHT J, CHANG J B

Semiconductor device has complementary metal oxide semiconductor device layer that is in contact with source and drain, and gate are that connected to graphene channel respectively.

CHEN K, LIN Y, AVOURIS P, FARMER D B, FARMER D, CHEN K N, LIN Y M, KUANNENG C, YUMING L

Matrix-assisted laser desorption/ionization time-of-flight mass spectrometry-target for the sample analysis, comprises a matrix-assisted laser desorption/ionization time-of-flight plate, a graphene layer, and a metal layer or silicon layer.

CHO D H, HAM S J, LEE I H, HONG S S, LEE H J

Grinding-and/or cutting disk for machining and cutting workpiece i.e. abrasive grain, has hardened corpus including grained abrasive, filler and polymer as binder matrix, where filler comprises expanded graphite and/or graphene.

TRAPP V, REMP M, LANGER W, ADASCH V, DEEKEN S

Applying a coating composition on substrate comprises preparing a coating by mixing carbon in form of carbon nanotubes, graphene and/or fullerenes with metal particles and two-dimensionally or selectively applying the coating on substrate.

ADLER U, RODE D, BURESCH I, WANG J, FRECKMANN D, SCHMIDT H, ROHDE D, WANG Y

Graphene FET comprises a gate stack including a seed layer, a gate oxide formed over the seed layer and a gate metal formed over the gate oxide, an insulating layer, a graphene sheet, a spacer, and a source contact and a drain contact.

LIN Y, JENKINS K A, VALDES GARCIA A, VALDESGARCIA A, GARCIA A V, VALDES G A, LIN Y M

Producing a graphene-solution, useful for producing a composite material, which is useful in batteries, capacitors, paints, coatings and catalysts, comprises reducing graphite with an alkali metal salt in a polar organic solvent.

WOLF A, LOLLI G, MLECZKO L, SCHLUETER O F, SCHLUETER O F K, SCHLUETER O, SCHLUTER O F

Composite material, useful for producing graphene layers material, comprises a layered double hydroxide or a layered silicate and a polyacrylonitrile, which is at least partially decomposed to graphene layers.

WOLF A, LOLLI G, MLECZKO L, SCHLUETER O F, SCHLUETER O F K, SCHLUTER O F

Electronic device e.g. organic thin-film transistor, photovoltaic cell, image scanner, memory device, useful for forming semiconducting layer on substrate comprises semiconducting layer containing organic semiconductor and graphene.

WU Y, HU N, LIU P, MAHABADI H K, SMITH P, BARANYI G, HU N X, SMITH P F

Electrically activating a structure having graphene layers formed on a silicon carbide layer comprises subjecting the structure to an oxidation process.

MCFEELY F R, YURKAS J J, OIDA S, HANNON J B