国家/地区 中国（31） 美国（2） 世界知识产权组织（2）
IPC部 C（31）
IPC大类 C01（31） H01（7） B82（6）
C30（6） C23（3） C08（2）
IPC小类 C01B（31）
IPC C01B031/04（28） H01L021/02（7） B82Y040/00（5）
C30B029/02（4） C01B031/02（3） C23C016/26（3）
B82Y030/00（2） C08K003/04（2） C23C016/02（2）
C23C016/56（2） C30B025/18（2）
发明人 ZHANG Y（31）
公开年 2012（31）
申请年 2012（31）
专利权人 UNIV XIDIAN（22） DENG P（2） GUO H（2） LEI T（2）
UNIV HEILONG.（2） ZHANG K（2） ZHANG Y（2）

Preparation of copper phthalocyanine functional graphene for preparing graphene assembly film, by ultrasonic dispersing graphite and copper phthalocyanine tetrasulfonic acid tetrasodium salt, centrifuging, filtering, washing, and drying.

SHEN X, ZHANG Y, FAN Y

Reduction of graphene oxide to prepare graphene, involves dispersing graphene oxide in water, adding sodium-tellurium hydride solution, reacting, filtering, washing solid with sodium borohydride aqueous solution and water, and drying.

WANG C, ZHANG Y, HAN C, SUN L, LIU B

Mercapto acid reduction preparation of stably-dispersible graphene for, e.g. transistor, involves ultrasonically treating graphene oxide in water, heating, stirring, adding mercapto acid, reacting, filtering, washing, and drying.

ZHENG M, CAO X, ZHANG Y, SUN L, ZHAO D

Recording material used for ink jet printing, comprises coating containing oxidized graphite alkene/polyacrylic acid copolymer ink absorbing layer, where copolymer comprises double bond graphene oxide, acrylic acid, water and initiator.

BU H, HAN J, HUANG Y, JIANG Z, LIU L, ZHANG Y, LI J

Device, useful for preparing graphene, comprises a reaction chamber, which is provided with first and second gas inlets and a material feeding port that are arranged on walls of the reaction chamber except a pneumatic bottom wall.

ZHANG Y

Preparing structured graphene, comprises cleaning silicon substrate and vacuumizing, introducing propane into the substrate to carbonize, performing heteroepitaxial growth, and cooling the epitaxial cubic silicon carbide film.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene on silicon carbide substrate useful for preparing microelectronic device, involves cleaning silicon carbide sample sheet, depositing layer of silicon dioxide and nickel film annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Method for preparing structured graphene used for manufacturing microelectronic device, involves depositing silicon dioxide on silicon carbide wafer, forming structured pattern and carbon film, depositing nickel film and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene by depositing silicon dioxide layer on silicon carbide wafer surface, scribing graphics window, reacting carbon tetrachloride with naked silicon carbide, putting wafer on copper film, and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F