国家/地区 中国（17）
IPC部 H（11） B（6） C（4）
G（3）
IPC大类 H01（11） B82（4） C01（3）
B81（2） G01（2）
IPC小类 H01L（11） B82Y（4） C01B（3）
B81C（2） G01N（2）
IPC B82Y010/00（3） C01B031/04（3） H01L021/04（3）
H01L021/768（3） H01L029/78（3） B81C001/00（2）
H01L021/02（2） H01L029/49（2）
发明人 FU Y（10） HUANG R（10） WEI Z（10）
ZHANG X（10） ZHAO H（6） WEI Q（5）
YE T（4） YIN J（4） CAO Y（3）
CUI X（3） REN L（3） CHEN J（2）
FANG R（2） GUO X（2） JIN Y（2）
公开年 2012（17）
申请年 2012（13）  2011（4） 
专利权人 UNIV PEKING（17）

Graphene growth quality detecting method, involves processing graphene with copper substrate by illuminating light from infrared lamp, and measuring growth quality of graphene in substrate by optical microscope or optical magnifier.

GUO X, JIA C, JIANG J

Method for preparing graphene involves growing graphene on insulating substrate or metal, and carrying out optical photo-etching on insulating substrate.

PENG L, WANG S, XU H, ZHANG Z, SHI R

Graphene-emitting diode structure for diode logic gate, has rectangle portions that are connected with graphene nanostructures, and graphene nanostructure that is composed of negative type and positive type doping graphene nanostructure.

FU Y, HUANG R, REN L, ZHAO H, WEI Z, ZHANG X, YE T

Preparing graphene nanometer belt for making integrated circuit, involves preparing graphene on substrate, using metal nano-particles, etching along graphene preferred direction in annealing process, in boundary domain function of graphene.

FU Y, HUANG R, WEI Z, ZHANG X, YE T, ZHOU M

Etching of multi-layered graphene involves forming multi-layered graphene on substrate, forming bands with specific height on substrate, annealing substrate by supplying argon/hydrogen, and then naturally cooling substrate.

FU Y, HU B, HUANG R, WEI Z, ZHANG X, YE T

Manufacture of metal inductor for wireless communication application, involves forming lower metal layer and insulating dielectric layer, etching, depositing diffusion barrier layer and metal seed layer, and growing graphene layer.

FU Y, HUANG R, LI C, REN L, WEI Q, WEI Z, ZHANG X, ZHOU M

Tunnelling field effect transistor structure source region which is made of graphite nano-belt whose width is greater than width of graphene nanometre belt of channel region and drain region.

DU G, LIU F, LIU X, WANG Y

Preparation of atom scale graphene groove, e.g. for nano-electronics field, by suspending graphene on high temperature resistant substrate, depositing metal atoms on surface, etching in argon/hydrogen atmosphere, cooling, and vacuum-drying.

FU Y, HUANG R, LI C, WEI Z, ZHANG X, YE T

Preparation of graphene used in preparing conductive polymer nanocomposite material, by dispersing graphite oxide in solvent, subjecting into ultrasonic peeling treatment, irradiating with gamma-ray at room temperature, and filtering.

LI J, PENG J, ZHAI M, ZHANG Y

Silicon dioxide pattern processing method involves transferring image of graphene to silicon dioxide substrate after etching silicon dioxide film by etching solution.

FU Y, HUANG R, LI P, REN L, ZHAO H, WEI Z, ZHANG X