国家/地区 美国（11） 韩国（5） 欧洲专利局（EPO）（4） 中国（3）
IPC部 H（11） C（6） G（5）
B（2）
IPC大类 H01（11） C01（4） G01（4）
C23（3）
IPC小类 H01L（10） C01B（4） C23C（3）
G01N（3） G01B（2）
IPC H01L021/02（4） G01N023/2273（3） C01B032/182（2）
C01B032/186（2） C23C016/26（2） G01B015/02（2）
H01L021/285（2） H01L021/768（2） H01L029/10（2）
H01L029/24（2） H01L029/51（2） H01L029/786（2）
发明人 SHIN H（10） BYUN K（6） CHO Y（5）
KIM S（5） LEE E（5） SHIN H J（5）
BYUN K E（3） LEE C（3） LEE M（3）
SHEN X（3） SONG H（3） CHO Y C（2）
JIN S（2） KIM C（2） LEE C S（2）
公开年 2021（16）
申请年 2021（16）
专利权人 SAMSUNG ELECTRONICS CO LTD（16）

Method for measuring thickness of graphene layer directly grown on silicon substrate by using X-ray photoelectron spectroscopy (XPS), involves obtaining effective attenuation length from linear relationship between measurement results by transmission electron microscope and XPS.

LEE E K, CHO Y J, KIM S W, BYUN K, SONG H J, SHIN H J

Measuring thickness of graphene layer directly grown on silicon substrate by obtaining signal intensities from graphene layer directly grown on silicon substrate in response to emitting X-ray radiation toward graphene layer using X-ray photoelectron spectroscopy instrument and calculating thickness.

SHIN H, SONG H, BYUN K, KIM S, CHO Y, LEE E, CHO Y C, BYUN K E, SONG H J, SHIN H J, SHEN X, JIN S, ZHAO L, LI Y

Measuring thickness of graphene layer grown on silicon substrate by using X-ray photoelectron spectroscopy device comprises obtaining signal intensities from graphene layer to emit X-ray radiation and calculating thickness of graphene layer.

LEE E, CHO Y, KIM S, BYUN K, SONG H, SHIN H

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Conductive structure for single layer structure, has work function control layer that is configured to control work function of conductive structure, where work function control layer is bonded to the conductive material layer.

SHIN H, KIM S, BYUN K, LEE E, KIM C, LEE C

Gas diffusion layer for a metal-air battery comprises porous layer comprising non-conductive fiber structures and adhesive layers and conductive carbon layers, where each conductive carbon layer comprises a carbon material.

IM D, PARK J, KIM J, KIM M

Layer structure for use in electronic device e.g. memory device, has insulating layer for covering outside surface of diffusion barrier and conductive material layer, where edge of barrier layer is aligned with edge of material layer.

LEE J, SHIN H, PARK S, CHO Y, NAM S, SONG H

Composite useful in photoelectric device, thermal sensing device and electronic device for sensing heat or infrared light, comprises block copolymer including e.g. alkyl-based first structural unit, and polyvalent metal ion.

CHOI Y, KIM T H, WANG L, VINCENZO C, ZHUN Z, CHIARA D, DARAIO C, ZHOU Z, COSTANZA V, CHOI Y S

Field effect transistor for use in integrated circuit devices, has source electrode and drain electrode arranged on substrate, gate insulating film for surrounding each of set of channel layers, and gate electrode for surrounding film.

SHIN H, CHO Y, SEOL M, LEE M, HYUN L, CHO Y C, SHIN H J, SHEN X, ZHAO L

Apparatus for manufacturing graphene by using plasma, has gas supply for supplying reducing gas into reaction chamber at height from upper surface of substrate supporter in height direction of reaction chamber.

LEE C, LEE E, SHIN H, BYUN K, KIM S, BYUN K E, SHIN H J, LEE C S