国家/地区 世界知识产权组织（11）
IPC部 C（11） H（8） G（4）
B（3）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C01B032/186（8） C23C016/26（7） C23C016/02（4）
B82Y040/00（3） C01B032/184（3） H01L021/205（3）
B82Y030/00（2） C01B032/182（2） C23C016/40（2）
C23C016/56（2） C30B029/02（2） H01L021/02（2）
发明人 IFUKU R（3） MATSUMOTO T（3） WADA M（3）
BADCOCK T J（2） DIXON S（2） GUINEY I（2）
KABUKI N（2） NAVEH D（2） YAMADA H（2）
公开年 2022（11）
申请年 2022（11）
专利权人 TOKYO ELECTR.（4） PARAGRAF LTD（2） UNIV BARILAN（2）

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Repairing layers of laminate stack or printed circuit board, comprises providing layered structure, identifying fault location in outer graphene layer, preparing surface of outer graphene layer, and applying localized heat on fault location.

MENTOVICH E, ATIAS B, NAVEH D, LEVI A, SMOLINSKY E Z B

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Transferring molecular material to surface involves contacting substrate with solution-synthesized polymer precursors, removing bulk pyrene matrix, and surface-assisted cyclodehydrogenation.

CROMMIE M F, FISCHER F R, BOKOR J, JACOBSE P H, MUTLU Z, MCCURDY R D, VEBER G C, RIZZO D J

Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.

DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Lithium or sodium-based battery used for e.g. portable electronic device, comprises anode at least partially covered on its side facing electrolyte by at least one artificial solid-electrolyte interphase layer with layer(s) of porous graphene with pores having preset average characteristic width.

CHOI K, HEIGHT M J

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN