国家/地区 中国（11） 美国（8） 世界知识产权组织（7） 台湾（5） 韩国（3） 欧洲专利局（EPO）（2） 英国（2） 日本（2）
IPC部 C（26）
IPC大类 C23（26）
IPC小类 C23C（26）
IPC C23C016/26（11） H01L021/02（9） H01L021/285（7）
C01B032/186（6） C23C014/04（4） C23C014/35（4）
C23C014/58（4） C23C016/50（4） H01L021/205（4）
H01L021/768（4） C23C014/06（3） C23C014/18（3）
C23C016/02（3） C23C016/455（3） H01L023/532（3）
发明人 BYUN K（3） SHIN H（3） BYUN K E（2）
GUINEY I（2） LI P（2） MATSUMOTO T（2）
SHIN H J（2） SHIN K（2） THOMAS S（2）
公开年 2022（26）
申请年 2021（26）
专利权人 SAMSUNG ELEC.（3） APPLIED MATE.（2） IND TECHNOLO.（2） PARAGRAF LTD（2）
TOKYO ELECTR.（2）

Manufacturing method of graphene-coated mold, involves forming mold by forming pattern on laminated dry film photoresist (DFR) or DFR/TRF film through exposure and development.

MOON S I, KWON Y, WOOK Y B

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Carrier plate structure for preparing single crystal silicon heterojunction solar cell, has graphite frame whose front and back surfaces are provided with coating structure, where coating structure is symmetrically arranged.

YANG M, LIU M

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Formation of material film used in electronic device, by forming material film on partial region of substrate using sputtering process, removing non-photosensitive mask from substrate, and heat-treating substrate and material film.

JUNG J, KIM T, ZHAO P, SHIN M, SHIN H, SEOL M, KIM S, BYUN K, BYUN K E, KIM S W, SHIN H J, SHIN M S, JOVIN, KIM T H, JUNG J H

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Substrate for forming semiconductor device, comprises graphene layer arranged on silicon surface of silicon carbide crystal substrate, epitaxial growth layer, and graphene layer arranged on silicon surface of epitaxial growth layer.

NORIYUKI M, TAKUJI M, MITSURU M, TAKAYASU O

Adhesion promoting layer for depositing conductive layer on inorganic or organic-inorganic hybrid substrate to form conductive structure, includes metal oxide layer containing metal oxide and chelating agent, arranged on inorganic or organic-inorganic hybrid substrate, and interface layer.

HUANG M, WANG W, CHANG Y

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T