国家/地区 中国（36） 美国（21） 韩国（18） 世界知识产权组织（10） 日本（3） 英国（2） 印度（2）
IPC部 C（69）
IPC大类 C23（69）
IPC小类 C23C（67） H01L（30） H01M（25）
C01B（23） B82Y（9） B22F（6）
C25D（6） C22C（5） C30B（5）
H01J（5） H01G（4） H05K（4）
B01J（3） C08J（3） C08L（3）
IPC C23C016/26（31） H01L021/02（16） C23C016/02（15）
C01B032/186（14） H01M004/66（10） B82Y040/00（9）
H01L021/285（9） H01L021/768（9） H01M004/36（9）
H01M004/38（8） H01M010/0525（8） C23C016/455（7）
C23C016/56（7） H01M010/052（7） B82Y030/00（6）
发明人 LEE C S（5） WANG Y（5） LEE C（4）
LI J（4） LI X（4） WANG X（4）
ZHANG G（4） ZHU Z（4） BYUN K（3）
BYUN K E（3） KIM K（3） KIM Y（3）
LI Z（3） SHIN K（3） SHIN K W（3）
公开年 2023（69）
申请年 2022（43）  2021（14）  2023（12） 
专利权人 SAMSUNG ELEC.（7） APPLIED MATE.（3） YANGZHOU NAL.（3） LYTEN INC（2）
TOKYO ELECTR.（2） UNIV IMAM AB.（2）

Current collector for lithium metal battery, has graphene single layer that is formed on conductive thin film, metal nanoparticles that are provided on graphene layer, and concave-convex portion including protrusion and concave portion.

JUNG H T, SUK J D, WU M H, KIM J Y, MOON S, JIN H Y, BOH K G

Plasma deposition of material onto two dimensional layer of first substrate, involves depositing protective layer directly onto dimensional layer by pulsed plasma deposition process, and depositing second layer onto protective layer by second plasma deposition process.

RIAZIMEHR S, KNOOPS H, SUNDARAM R

Method for manufacturing surface-patterned current collector, comprises etching and patterning current collector and coating carbon material on patterned current collector, where patterning by etching comprises electrochemical etching.

JIN A, SUNG G W

Branched nano-wire array composite photoelectric film used for photo cathode protection, has composite heterojunction system cadmium sulfide/reduced graphene oxide quantum dots/titanium dioxide branched nanowire array composite photoelectric film.

HOU B, LU G, SUN M, JIANG X

Depositing gate dielectric on two-dimensional material involves depositing seed layer over atomically smooth surface of two dimensional material, evaporating predefined thickness of seed layer from atomically smooth surface, and performing atomic layer deposition.

SHRIVASTAVA M, KHANEJA M, MEERSHA A

High temperature furnace tube for use in semiconductor process, has supporting plate distributed with multiple layers for supporting multiple substrates, where each substrate is placed on each layer of supporting plate.

WANG H, ZHANG S, SHEN H, LV C, ZHOU D, KIM J, PARK J S, WANG J, JIA S, ZHANG X, KIM Y

Achieving uniform particulate type deposition of functionalized graphene platelets on carbon fiber fabric, involves preparing aqueous solution comprising magnesium salt and solvent, subjecting aqueous solution to sonication, dispersing functionalized graphene platelets in sonicated solution.

SINGH A, JATOTHU P K

Preparing copper-clad aluminum composite welding strip used in interconnection strip, bus belt comprises surface cleaning of copper strip and aluminum rod, wrapping, multiple drawing of composite copper rod, and ultrasonic testing, drawing composite copper wire, heat annealing and tin plating.

DONG W, ZHANG W, GAO L, CHEN Q

Anode active material comprises carbon material, and silicon structure attached to carbon material, where silicon structure includes silicon nanoparticle, metal thin film formed on surface of silicon nanoparticle, and graphene coated on surface of metal thin film.

KIM Y H, SON M W, KIM Y, SUN M

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X