国家/地区 中国（10）
IPC部 C（10） H（10） B（3）
IPC大类 C23（10）
IPC小类 H01L（10）
IPC C23C016/26（4） C01B032/186（3） C23C014/16（2）
C23C016/02（2） C23C016/34（2） H01L021/02（2）
H01L031/18（2）
发明人
公开年 2023（10）
申请年 2022（8）  2023（2） 
专利权人

Branched nano-wire array composite photoelectric film used for photo cathode protection, has composite heterojunction system cadmium sulfide/reduced graphene oxide quantum dots/titanium dioxide branched nanowire array composite photoelectric film.

HOU B, LU G, SUN M, JIANG X

Preparing copper-clad aluminum composite welding strip used in interconnection strip, bus belt comprises surface cleaning of copper strip and aluminum rod, wrapping, multiple drawing of composite copper rod, and ultrasonic testing, drawing composite copper wire, heat annealing and tin plating.

DONG W, ZHANG W, GAO L, CHEN Q

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Chromium metal etching solution useful for integrated circuit comprises ceric ammonium nitrate, hydrogen peroxide, oxalic acid, dodecyldimethylbenzylammonium chloride, auxiliary agent and deionized water (remaining amount).

TANG X, HE K, GE Y

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Method for preparing flexible graphene/germanium heterogeneous junction used in semiconductor material preparation, by using germanium as target, copper foil graphene as the substrate, and laser as particle excitation source, and depositing germanium thin films on copper foil graphene by PLD method.

LIN S, HU J, ZANG Y, CAO D, SONG L, XIA C, ZHANG G, LI Z, WANG R, GONG J, DING B, LI L

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Method for preparing anti-oxidation bonding alloy silver wire containing graphene on surface in microelectronic packaging field, involves using polystyrene as carbon source to grow graphene on surface of copper plating layer to obtain bonded silver wire containing graphene on surface.

LI Y, LI S

Depositing graphene barrier film, involves placing substrate containing the titanium thin film layer into substrate processing system chamber forming processing space, supplying first reaction gas into chamber, supplying second reaction gas, and forming graphene layer on titanium thin film layer.

PARK J, LI J, JIN D, SUN W, KIM T, YIN Y, TIAN Z, BAK H, PARK J H, LEE K J, KIM D W, SUN W H, KIM T S, YOON W J, JEON J H, PARK H K, PARK H, JEONJINHO, YUN W J, WOO K D, LEE K