国家/地区 中国（14）
IPC部 C（14）
IPC大类 C23（14） H01（5） C01（3）
B82（2） C22（2）
IPC小类 C23C（14） C01B（3） H01L（3）
B82Y（2） C22C（2） H01H（2）
IPC C23C016/44（14）
发明人 CAO H（3） LV X（3） MA Y（3）
SHEN H（3） QIAN T（2） WANG R（2）
公开年 2021（5） 2022（5） 2020（4）
申请年 2020（14）
专利权人 SHANGHAI XIN.（3） ZHEJIANG CHI.（3）

Semiconductor component useful in plasma reaction device and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen, comprises conductive heat conducting material filled in pores of first corrosion resistant coating.

NI T, CHEN X, ZHU S

Growing graphene film on surface of copper powder, by heating copper powder or its mixture in chemical vapor deposition furnace to oxidation temperature, pre-oxidizing copper powder, continuously heating furnace to growth temperature, reducing surface of copper powder, growing graphene, and cooling.

CAO H, LV X, SHEN H, YANG J, MA Y

Method for preparing metal-based graphene composite material, involves growing graphene film on surface of metal powder by chemical vapor deposition in oxygen-free and preset environment to form a metal-based graphene composite material using mixed powder.

QIAN T, CAO H, SHEN H, LV X, MA Y

Method for preparing graphene-reinforced copper chromium electric contact material, involves cold pressing second mixed powder and sintered to obtain preform, and re-pressing and re-firing preform to obtain electrical contact material.

LV X, SHEN H, QIAN T, CAO H, MA Y

Structure super-sliding device useful e.g. for manufacturing industry, has super-sliding sheet whose edge is warped along opposite direction of super-sliding surface.

ZHENG Q, XIANG X

Multi-chamber semiconductor thin film epitaxy device comprises growth chambers and mechanical arm, where growth chambers have graphene and semiconductor material growth chamber, where graphene growth chamber used to grow graphene film.

GUO L, WEI T, RAN J, WANG J

Preparing nanorobot useful for tumor treatment, comprises e.g. placing paramagnetic metal target in sputtering chamber, and passing argon and oxygen into sputtering chamber, passing shielding gas into sputtering chamber, and curing.

Preparation of few-layer graphene film by normal pressure chemical vapor deposition, cleaning copper foil substrate, annealing copper foil for first time, carrying out nitric acid solution treatment to copper foil, and cooling graphene film.

ZHAO B, LI X, ZHANG Q, ZHOU T, WANG R, WANG C, YUAN L

Composition useful as catalysts and electrodes, comprises a nanoporous carbon powder comprising nanopores having disposed in it copper metal nanostructures and an elemental copper nanowires.

NAGEL C J, BRODEUR C L, NAZEL C A J, BRODARD C L

Regulating number of molybdenum disulfide layers in molybdenum disulfide/graphene heterojunction comprises using methane and hydrogen, placing polished copper foil into quartz tube and graphene-transferred silicon dioxide/ substrate.

XU K, ZHOU Y, LI P